JPH0345555B

PURPOSE:To obtain a photosemiconductor device by forming a diffusion source containing B or P of a transparent conductive film on a non-single crystal layer formed on a substrate and diffused in solid-to-solid manner at lower than 700 deg.C, particularly at 200-400 deg.C. CONSTITUTION:A transparent...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YAMAZAKI SHUNPEI, MOTAI NOBORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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