FORMATION OF RESIST PATTERN
PURPOSE:To improve subsurface treating and line width controlling properties by treating the deposits on side walls generated at the time of dry development of a photoresist with plasma contg. fluorine or acidic soln. CONSTITUTION:The prescribed parts of the photoresist film 3 are exposed via a mask...
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| creator | TAKEHARA DAISUKE |
| description | PURPOSE:To improve subsurface treating and line width controlling properties by treating the deposits on side walls generated at the time of dry development of a photoresist with plasma contg. fluorine or acidic soln. CONSTITUTION:The prescribed parts of the photoresist film 3 are exposed via a mask pattern 17 by a UV beam 16 to form exposed parts 4a. Silicon is then selectively diffused into the exposed parts 4a in a gas contg. silicon in the molecule of hexamethyl disilazane, etc. The resist film is thereafter subjected to a dry development by O2 plasma to remove the exposed parts. The deposits of 200 to 400Angstrom are formed on the side walls of the resist film 6 in this state and, therefore, the resist film is immersed into an aq. soln. mixture composed of 90% ammonium fluoride and 40% acetic acid to remove the deposits in succession to the above-mentioned development. The controllability of the line width transferred on the subsurface side walls and the reproducibility of the subsurface working are improved in this way. |
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CONSTITUTION:The prescribed parts of the photoresist film 3 are exposed via a mask pattern 17 by a UV beam 16 to form exposed parts 4a. Silicon is then selectively diffused into the exposed parts 4a in a gas contg. silicon in the molecule of hexamethyl disilazane, etc. The resist film is thereafter subjected to a dry development by O2 plasma to remove the exposed parts. The deposits of 200 to 400Angstrom are formed on the side walls of the resist film 6 in this state and, therefore, the resist film is immersed into an aq. soln. mixture composed of 90% ammonium fluoride and 40% acetic acid to remove the deposits in succession to the above-mentioned development. 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CONSTITUTION:The prescribed parts of the photoresist film 3 are exposed via a mask pattern 17 by a UV beam 16 to form exposed parts 4a. Silicon is then selectively diffused into the exposed parts 4a in a gas contg. silicon in the molecule of hexamethyl disilazane, etc. The resist film is thereafter subjected to a dry development by O2 plasma to remove the exposed parts. The deposits of 200 to 400Angstrom are formed on the side walls of the resist film 6 in this state and, therefore, the resist film is immersed into an aq. soln. mixture composed of 90% ammonium fluoride and 40% acetic acid to remove the deposits in succession to the above-mentioned development. The controllability of the line width transferred on the subsurface side walls and the reproducibility of the subsurface working are improved in this way.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | FORMATION OF RESIST PATTERN |
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