COMPOUND SEMICONDUCTOR DEVICE

PURPOSE:To design an LSI and VLSI composed of a plurality of elements, and to contribute to the design of an analog element particularly by inhibiting mutual intervention between the two elements. CONSTITUTION:The drain 2, source 3 and gate 4 of a first MESFET are formed onto a GaAs substrate 1, and...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	ONODERA KAZUMASA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!