JPH0319709B

PURPOSE:To obtain sufficient breaking strength even when a junction area is reduced by deepening a section, to which high voltage is applied, in a semiconductor region as a protective resistor to comparatively deep value and expanding the junction area. CONSTITUTION:When a comparatively deep well re...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YASHIKI NAOKI, UCHIBORI KYOBUMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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