MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent ion damage by forming a trench by projecting an ion beam, burying positive resist in the trench to flatten the surface, performing etching by using a resist pattern as a mask, and forming a T-type dummy pattern. CONSTITUTION:By projecting Ga ion beam 6 on an insulating film 5, a t...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	TAKANO HIROZO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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