SEMICONDUCTOR DEVICE

PURPOSE:To prevent an Al electrode from being corroded due to a contaminant and moisture and to contrive the improvement of the reliability of a semiconductor device by a method wherein an Al oxide film is formed on the surface of the Al electrode subsequent to a wire bonding. CONSTITUTION:In a semiconductor device having an Al electrode as a bonding pad for a semiconductor pellet, an Al oxide film 7 is formed on the surface of the Al electrode 5 being exposed after the completion of a wire bonding by an oxidation of an Al electrode 6. An Si oxide film 2 is formed on a semiconductor substrate 1, in which an N-type or P-type impurity is diffused, and moreover, an Si nitride film 3 is grown for stabilization. The Al electrode 5 is formed on this film 3 and moreover, an Si oxide film 4 for protection use is adhered thereon and a bonding electrode part only is opened. After a wire bonding is performed in an assembly process, the surface of the exposed Al electrode is oxidized and the film 7 is formed. Thereby, this film 7 protects the electrode 5 from a contaminant which intrudes from the exterior and moisture and prevents the electrode from being corroded; therefore, the reliability of the device is improved.