JPH023552B

PURPOSE:To manufacture an inexpensive, high efficiency optical image pickup device by a method wherein a photodetector layer and electrodes are formed of amorphous Si in a solid state image pickup device with a photodetector on a semiconductor substrate provided with a scanning circuit. CONSTITUTION:An n type region 11 is provided for the formation of a diode and, at the same time, a scanning circuit forming p type region 12 (CCD) or an n type region 13 (BBD) are formed on a p type semiconductor substrate 10. A gate electrode 14 is built on the substrate 10 across an insulator film 15 and an insulator layer 16 is laid on the electrode 14. Next, on the substrate 10, a diode electrode 17, and a photodetecting layer 18 and a transparent electrode 19 forming a photoconductive layer or photodiode or phototransistor are provided on the substrate 10. The electrode 17, photodetector 18, and transparent electrode 19 are composed of amorphous Si and formed in an uninterrupted process.