JPH0234194B

The transistor comprises two electrodes, source (12) and drain (13), with a semiconductor tunnel channel (11) arranged therebetween. A gate (14) for applying control signals is coupled to the channel. The semiconductor, at low temperatures, behaves like an insulator with a low barrier (some meV) thr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FUORUKAA GURAFU, PIEERU REOHORUDO GYUURETSUTO, KAARU AREKISANDAA MYUURAA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!