COMPLEX STRUCTURE
PURPOSE: To perform a high energy utility by executing a thin transparent film of a metal oxide on a metal film and incorporating closed fine pores adjacent to the metal film distributed on a surface of the oxide film in the oxide film. CONSTITUTION: A minimum thickness of a metal film is decided ac...
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| creator | BEATO SHIYUMITSUTOHARUTAA HAINTSU SUPAANI |
| description | PURPOSE: To perform a high energy utility by executing a thin transparent film of a metal oxide on a metal film and incorporating closed fine pores adjacent to the metal film distributed on a surface of the oxide film in the oxide film. CONSTITUTION: A minimum thickness of a metal film is decided according to a critical percolation mainly remarkably rising at its electric impedance. A minimum value of the film thickness is 1.0 nm, and a maximum value is dependent upon a desired transparency, and this value is preferably as large as at least 50 nm. A thickness of an oxide film mainly dependent upon an initial thickness of the metal film. A thickness of the oxide film is, for example, 10 nm to 50 μm. A diameter of a pore of the metal oxide film is mainly dependent upon conditions during an electrolysis or an electrolyte to be used. Its diameter is, for example, 2 to 500 nm. The pores are closed adjacent to the metal film. During the electrolysis, a thin shield layer having a thickness of preferably several nm is formed between the metal film and a multiporous metal oxide film to isolate the two layers. A thickness of the shield layer is mainly dependent upon a voltage to be applied, and its thickness is, for example, 1 to 100 nm or preferably 5 to 50 nm. |
| format | Patent |
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CONSTITUTION: A minimum thickness of a metal film is decided according to a critical percolation mainly remarkably rising at its electric impedance. A minimum value of the film thickness is 1.0 nm, and a maximum value is dependent upon a desired transparency, and this value is preferably as large as at least 50 nm. A thickness of an oxide film mainly dependent upon an initial thickness of the metal film. A thickness of the oxide film is, for example, 10 nm to 50 μm. A diameter of a pore of the metal oxide film is mainly dependent upon conditions during an electrolysis or an electrolyte to be used. Its diameter is, for example, 2 to 500 nm. The pores are closed adjacent to the metal film. During the electrolysis, a thin shield layer having a thickness of preferably several nm is formed between the metal film and a multiporous metal oxide film to isolate the two layers. A thickness of the shield layer is mainly dependent upon a voltage to be applied, and its thickness is, for example, 1 to 100 nm or preferably 5 to 50 nm.</description><language>eng</language><subject>APPARATUS THEREFOR ; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS ; BASIC ELECTRIC ELEMENTS ; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS ; CHEMISTRY ; COLOUR PRINTING ; ELECTRIC HEATING ; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; GLASS ; INFORMATION STORAGE ; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER ; JOINING GLASS TO GLASS OR OTHER MATERIALS ; LAYERED PRODUCTS ; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM ; LINING MACHINES ; MEASURING ; MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE ; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR ; METALLURGY ; MINERAL OR SLAG WOOL ; PERFORMING OPERATIONS ; PHYSICS ; PRINTING ; PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES ; STAMPS ; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS ; SURFACE TREATMENT OF GLASS ; TARIFF METERING APPARATUS ; TESTING ; TRANSPORTING ; TYPEWRITERS</subject><creationdate>1990</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19901001&DB=EPODOC&CC=JP&NR=H02245328A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19901001&DB=EPODOC&CC=JP&NR=H02245328A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BEATO SHIYUMITSUTOHARUTAA</creatorcontrib><creatorcontrib>HAINTSU SUPAANI</creatorcontrib><title>COMPLEX STRUCTURE</title><description>PURPOSE: To perform a high energy utility by executing a thin transparent film of a metal oxide on a metal film and incorporating closed fine pores adjacent to the metal film distributed on a surface of the oxide film in the oxide film. 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HAINTSU SUPAANI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH02245328A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1990</creationdate><topic>APPARATUS THEREFOR</topic><topic>ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</topic><topic>CHEMISTRY</topic><topic>COLOUR PRINTING</topic><topic>ELECTRIC HEATING</topic><topic>ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>GLASS</topic><topic>INFORMATION STORAGE</topic><topic>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</topic><topic>JOINING GLASS TO GLASS OR OTHER MATERIALS</topic><topic>LAYERED PRODUCTS</topic><topic>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</topic><topic>LINING MACHINES</topic><topic>MEASURING</topic><topic>MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE</topic><topic>MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR</topic><topic>METALLURGY</topic><topic>MINERAL OR SLAG WOOL</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICS</topic><topic>PRINTING</topic><topic>PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STAMPS</topic><topic>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</topic><topic>SURFACE TREATMENT OF GLASS</topic><topic>TARIFF METERING APPARATUS</topic><topic>TESTING</topic><topic>TRANSPORTING</topic><topic>TYPEWRITERS</topic><toplevel>online_resources</toplevel><creatorcontrib>BEATO SHIYUMITSUTOHARUTAA</creatorcontrib><creatorcontrib>HAINTSU SUPAANI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BEATO SHIYUMITSUTOHARUTAA</au><au>HAINTSU SUPAANI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>COMPLEX STRUCTURE</title><date>1990-10-01</date><risdate>1990</risdate><abstract>PURPOSE: To perform a high energy utility by executing a thin transparent film of a metal oxide on a metal film and incorporating closed fine pores adjacent to the metal film distributed on a surface of the oxide film in the oxide film. CONSTITUTION: A minimum thickness of a metal film is decided according to a critical percolation mainly remarkably rising at its electric impedance. A minimum value of the film thickness is 1.0 nm, and a maximum value is dependent upon a desired transparency, and this value is preferably as large as at least 50 nm. A thickness of an oxide film mainly dependent upon an initial thickness of the metal film. A thickness of the oxide film is, for example, 10 nm to 50 μm. A diameter of a pore of the metal oxide film is mainly dependent upon conditions during an electrolysis or an electrolyte to be used. Its diameter is, for example, 2 to 500 nm. The pores are closed adjacent to the metal film. During the electrolysis, a thin shield layer having a thickness of preferably several nm is formed between the metal film and a multiporous metal oxide film to isolate the two layers. A thickness of the shield layer is mainly dependent upon a voltage to be applied, and its thickness is, for example, 1 to 100 nm or preferably 5 to 50 nm.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS THEREFOR ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY COLOUR PRINTING ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES GLASS INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER JOINING GLASS TO GLASS OR OTHER MATERIALS LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM LINING MACHINES MEASURING MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR METALLURGY MINERAL OR SLAG WOOL PERFORMING OPERATIONS PHYSICS PRINTING PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES STAMPS SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS TARIFF METERING APPARATUS TESTING TRANSPORTING TYPEWRITERS |
| title | COMPLEX STRUCTURE |
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