THIN AMORPHOUS FILM EXCELLENT IN HIGH-FREQUENCY CHARACTERISTIC AND ITS PRODUCTION

PURPOSE:To form a thin film reduced in magnetostriction, having high electric specific resistivity, excellent in high-frequency characteristics, and also excellent in corrosion resistance and weatherability by forming a thin Fe-Ti-Si amorphous film on a substrate by means of vapor deposition by a sp...

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Bibliographische Detailangaben
Hauptverfasser:	MATSUMOTO FUMIO, MASUMOTO TAKESHI, TERASAKA SHOJI, MIDERA MASAO
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INDUCTANCES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAGNETS METALLURGY SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSFORMERS TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	PURPOSE:To form a thin film reduced in magnetostriction, having high electric specific resistivity, excellent in high-frequency characteristics, and also excellent in corrosion resistance and weatherability by forming a thin Fe-Ti-Si amorphous film on a substrate by means of vapor deposition by a sputtering method by using a variously combined composite target. CONSTITUTION:At the time of forming a thin Fe-Ti-Si amorphous film excellent in high-frequency characteristics and other characteristics by using a magnetron sputtering device, a thin amorphous film having a composition represented by FexTiySiz [where the symbols (x), (y), and (z) stand for, by atom, 50-80%, 5-20%, and 10-35%, respectively, and x+y+z=100, and further, the ratio of Ti to Si is regulated to 0.14-2] and excellent in high-frequency characteristics is formed on a glass substrate by using a composite target in which the area ratios of Fe as main target and TiSi2 as chip target are regulated to 50-80% and 20-50%, respectively. At this time, as the above composite target, a composite target formed by the combination of Fe and TiSi2, Fe-Si and TiSi2, Fe-Si and Ti, or Fe-Ti and Si can be used, and also, three targets composed of Fe, Ti, and Si, respectively, can be used.