ELECTRON BEAM EXPOSURE PROCESS

PURPOSE:To enable specific drawing patterns to be accurately formed on a substrate as a work by a method wherein the first exposure evenly exposing the whole drawing pattern and the second exposure duplicatively exposing only the corner parts of the drawing patterns with the said first exposure are performed. CONSTITUTION:Within the electron beam exposure process wherein a glass substrate as a work 10 coated with a resist is irradiated with electron beams to draw specific drawing patterns 20, the first exposure evenly exposing the whole drawing pattern 20 and the second exposure duplicatively exposing only the corner parts 21 of the drawing patterns 20 with the said first exposure are performed. For example, in order to form a square drawing pattern 20, the said second exposure is performed only on the four corner parts 21 of the drawing patterns 20. At this time, the corner parts 21 of the drawing patterns 20 are irradiated with electron beams in the intensity so as to make the corner parts 21 square. The said intensity of the electron beams in the second exposure shall be specified to make the corner parts 21 square by previous simulation etc., in consideration of the sensitivity of the resist.