PRODUCTION OF SPUTTERING TARGET FOR FORMING SUPERCONDUCTING CERAMIC FILM
PURPOSE:To produce the target for forming a film excellent in superconductivity by mixing Ba carbonate powder and an excess of Cu oxide powder over the specified amt. to be mixed, calcining the mixture under specified conditions, crushing the calcined material and hot-pressing the crushed material....
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| creator | TAKESHITA TAKUO SUGIHARA TADASHI OUCHI YUKIHIRO |
| description | PURPOSE:To produce the target for forming a film excellent in superconductivity by mixing Ba carbonate powder and an excess of Cu oxide powder over the specified amt. to be mixed, calcining the mixture under specified conditions, crushing the calcined material and hot-pressing the crushed material. CONSTITUTION:The Ba carbonate powder and Cu oxide powder or the Sr carbonate powder, Ca carbonate powder, and Cu oxide powder or the Ba carbonate powder, Ca carbonate powder and Cu oxide powder are mixed. In this case, an excess of the Cu oxide powder over the carbonate powder by 0.1-10wt.% with respect to the equimolar ratio is added. The obtained mixture is held at 750-980 deg.C for 8-40hr, and calcined. Consequently, the multicomponent oxide of Ba, etc., and Cu free of residual carbonate ion is obtained. The oxide is crushed, and the powder is hot-pressed to obtain a sputtering target. By using this target, a superconducting ceramic film free of C as the impurities and excellent in superconductivity is obtained. |
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CONSTITUTION:The Ba carbonate powder and Cu oxide powder or the Sr carbonate powder, Ca carbonate powder, and Cu oxide powder or the Ba carbonate powder, Ca carbonate powder and Cu oxide powder are mixed. In this case, an excess of the Cu oxide powder over the carbonate powder by 0.1-10wt.% with respect to the equimolar ratio is added. The obtained mixture is held at 750-980 deg.C for 8-40hr, and calcined. Consequently, the multicomponent oxide of Ba, etc., and Cu free of residual carbonate ion is obtained. The oxide is crushed, and the powder is hot-pressed to obtain a sputtering target. By using this target, a superconducting ceramic film free of C as the impurities and excellent in superconductivity is obtained.</description><language>eng</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CABLES ; CEMENTS ; CERAMICS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ; CONCRETE ; CONDUCTORS ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; INSULATORS ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SLAG ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF NATURAL STONE</subject><creationdate>1990</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19900809&DB=EPODOC&CC=JP&NR=H02200774A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19900809&DB=EPODOC&CC=JP&NR=H02200774A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKESHITA TAKUO</creatorcontrib><creatorcontrib>SUGIHARA TADASHI</creatorcontrib><creatorcontrib>OUCHI YUKIHIRO</creatorcontrib><title>PRODUCTION OF SPUTTERING TARGET FOR FORMING SUPERCONDUCTING CERAMIC FILM</title><description>PURPOSE:To produce the target for forming a film excellent in superconductivity by mixing Ba carbonate powder and an excess of Cu oxide powder over the specified amt. to be mixed, calcining the mixture under specified conditions, crushing the calcined material and hot-pressing the crushed material. CONSTITUTION:The Ba carbonate powder and Cu oxide powder or the Sr carbonate powder, Ca carbonate powder, and Cu oxide powder or the Ba carbonate powder, Ca carbonate powder and Cu oxide powder are mixed. In this case, an excess of the Cu oxide powder over the carbonate powder by 0.1-10wt.% with respect to the equimolar ratio is added. The obtained mixture is held at 750-980 deg.C for 8-40hr, and calcined. Consequently, the multicomponent oxide of Ba, etc., and Cu free of residual carbonate ion is obtained. The oxide is crushed, and the powder is hot-pressed to obtain a sputtering target. By using this target, a superconducting ceramic film free of C as the impurities and excellent in superconductivity is obtained.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</subject><subject>CONCRETE</subject><subject>CONDUCTORS</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>INSULATORS</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SLAG</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1990</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAICPJ3CXUO8fT3U_B3UwgOCA0JcQ3y9HNXCHEMcncNUXDzDwJhX5BQcGiAa5Czvx9YA5Dv7Brk6OvprODm6ePLw8CalphTnMoLpbkZFN1cQ5w9dFML8uNTiwsSk1PzUkvivQI8DIyMDAzMzU0cjYlRAwBDky1n</recordid><startdate>19900809</startdate><enddate>19900809</enddate><creator>TAKESHITA TAKUO</creator><creator>SUGIHARA TADASHI</creator><creator>OUCHI YUKIHIRO</creator><scope>EVB</scope></search><sort><creationdate>19900809</creationdate><title>PRODUCTION OF SPUTTERING TARGET FOR FORMING SUPERCONDUCTING CERAMIC FILM</title><author>TAKESHITA TAKUO ; SUGIHARA TADASHI ; OUCHI YUKIHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH02200774A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1990</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</topic><topic>CONCRETE</topic><topic>CONDUCTORS</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>INSULATORS</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SLAG</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKESHITA TAKUO</creatorcontrib><creatorcontrib>SUGIHARA TADASHI</creatorcontrib><creatorcontrib>OUCHI YUKIHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKESHITA TAKUO</au><au>SUGIHARA TADASHI</au><au>OUCHI YUKIHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRODUCTION OF SPUTTERING TARGET FOR FORMING SUPERCONDUCTING CERAMIC FILM</title><date>1990-08-09</date><risdate>1990</risdate><abstract>PURPOSE:To produce the target for forming a film excellent in superconductivity by mixing Ba carbonate powder and an excess of Cu oxide powder over the specified amt. to be mixed, calcining the mixture under specified conditions, crushing the calcined material and hot-pressing the crushed material. CONSTITUTION:The Ba carbonate powder and Cu oxide powder or the Sr carbonate powder, Ca carbonate powder, and Cu oxide powder or the Ba carbonate powder, Ca carbonate powder and Cu oxide powder are mixed. In this case, an excess of the Cu oxide powder over the carbonate powder by 0.1-10wt.% with respect to the equimolar ratio is added. The obtained mixture is held at 750-980 deg.C for 8-40hr, and calcined. Consequently, the multicomponent oxide of Ba, etc., and Cu free of residual carbonate ion is obtained. The oxide is crushed, and the powder is hot-pressed to obtain a sputtering target. By using this target, a superconducting ceramic film free of C as the impurities and excellent in superconductivity is obtained.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CABLES CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CONCRETE CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY INSULATORS LIME, MAGNESIA METALLURGY REFRACTORIES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE |
| title | PRODUCTION OF SPUTTERING TARGET FOR FORMING SUPERCONDUCTING CERAMIC FILM |
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