MANUFACTURE OF HIGH REVERSE BLOCKING POWER DIODE

PURPOSE: To eliminate getter substance, to avoid corrosion of a semiconductor surface and to prolong the life of a carrier irrespective of diffusion depth by dropping a diffusion temperature to a desired one and generating a getter operation in a second process. CONSTITUTION: Boron is adhered to one...

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Bibliographische Detailangaben

Hauptverfasser:	FUESUNA BIARASU, RIHIYARUTO SHIYUPITSUTSU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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