SEMICONDUCTOR DEVICE

PURPOSE:To prevent occurrence of separation of a surface protecting material at the end section of a cathode electrode and lateral shifting of an intermediate shock absorbing plate by forming the end section of the cathode electrode of gold or a gold alloy. CONSTITUTION:A cathode post 1 and anode post 8 exist in this semiconductor device. A cathode electrode 3 which is ohmic-contacted with a semiconductor substrate 6 is formed on a semiconductor supporting plate 7 and the semiconductor substrate 6 and gold electrodes 4 are formed at the end section of the electrode 3 by vapor deposition or plating. A surface protecting material 5 is applied to the gold electrodes 4 and used as guides for fixing an intermediate shock absorbing plate put on the electrode 3 after the surface protecting material is hardened. Therefore, the surface protecting material does not separate at the end section of the cathode electrode 3 and the joining strength of the material 5 can be made stronger than the tensile strength of the material 5.