VARIABLE FIELD CONTENT READING MEMORY

VARIABLE FIELD CONTENT READING MEMORY

PURPOSE: To prevent waste of a memory bit by containing a content-addressable memory(CAM) word segment, a programer and a field selector. CONSTITUTION: The data are loaded to a four bits memory part 26 of a CAM word segment 12 through a memory bit line 22 when a word line selection signal 24 from a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: JIYUNICHI SANO, EDOWAADO TEII RUISU
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator JIYUNICHI SANO
EDOWAADO TEII RUISU
description PURPOSE: To prevent waste of a memory bit by containing a content-addressable memory(CAM) word segment, a programer and a field selector. CONSTITUTION: The data are loaded to a four bits memory part 26 of a CAM word segment 12 through a memory bit line 22 when a word line selection signal 24 from a word address decoder is activated. The programer 14 decides a size of field, that is, the number of bits in the field of one word, and divides the field or cascade connects the field to a next unit cell according to logic levels of a field division signal 36 and its auxiliary signal 38. The output of the programer 14 is connected to a field selector 16, and selects a required field output (F1-F5) according to a field decoding signal 40 (FD1-FD5) generated by a field decoder. Thus, the waste of the bit is eliminated.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH02139797A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH02139797A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH02139797A3</originalsourceid><addsrcrecordid>eNrjZFANcwzydHTycVVw83T1cVFw9vcLcfULUQhydXTx9HNX8HX19Q-K5GFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BHgZGhsaW5pbmjsbEqAEAmMkjcg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>VARIABLE FIELD CONTENT READING MEMORY</title><source>esp@cenet</source><creator>JIYUNICHI SANO ; EDOWAADO TEII RUISU</creator><creatorcontrib>JIYUNICHI SANO ; EDOWAADO TEII RUISU</creatorcontrib><description>PURPOSE: To prevent waste of a memory bit by containing a content-addressable memory(CAM) word segment, a programer and a field selector. CONSTITUTION: The data are loaded to a four bits memory part 26 of a CAM word segment 12 through a memory bit line 22 when a word line selection signal 24 from a word address decoder is activated. The programer 14 decides a size of field, that is, the number of bits in the field of one word, and divides the field or cascade connects the field to a next unit cell according to logic levels of a field division signal 36 and its auxiliary signal 38. The output of the programer 14 is connected to a field selector 16, and selects a required field output (F1-F5) according to a field decoding signal 40 (FD1-FD5) generated by a field decoder. Thus, the waste of the bit is eliminated.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>1990</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19900529&amp;DB=EPODOC&amp;CC=JP&amp;NR=H02139797A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19900529&amp;DB=EPODOC&amp;CC=JP&amp;NR=H02139797A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JIYUNICHI SANO</creatorcontrib><creatorcontrib>EDOWAADO TEII RUISU</creatorcontrib><title>VARIABLE FIELD CONTENT READING MEMORY</title><description>PURPOSE: To prevent waste of a memory bit by containing a content-addressable memory(CAM) word segment, a programer and a field selector. CONSTITUTION: The data are loaded to a four bits memory part 26 of a CAM word segment 12 through a memory bit line 22 when a word line selection signal 24 from a word address decoder is activated. The programer 14 decides a size of field, that is, the number of bits in the field of one word, and divides the field or cascade connects the field to a next unit cell according to logic levels of a field division signal 36 and its auxiliary signal 38. The output of the programer 14 is connected to a field selector 16, and selects a required field output (F1-F5) according to a field decoding signal 40 (FD1-FD5) generated by a field decoder. Thus, the waste of the bit is eliminated.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1990</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFANcwzydHTycVVw83T1cVFw9vcLcfULUQhydXTx9HNX8HX19Q-K5GFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BHgZGhsaW5pbmjsbEqAEAmMkjcg</recordid><startdate>19900529</startdate><enddate>19900529</enddate><creator>JIYUNICHI SANO</creator><creator>EDOWAADO TEII RUISU</creator><scope>EVB</scope></search><sort><creationdate>19900529</creationdate><title>VARIABLE FIELD CONTENT READING MEMORY</title><author>JIYUNICHI SANO ; EDOWAADO TEII RUISU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH02139797A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1990</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>JIYUNICHI SANO</creatorcontrib><creatorcontrib>EDOWAADO TEII RUISU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JIYUNICHI SANO</au><au>EDOWAADO TEII RUISU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VARIABLE FIELD CONTENT READING MEMORY</title><date>1990-05-29</date><risdate>1990</risdate><abstract>PURPOSE: To prevent waste of a memory bit by containing a content-addressable memory(CAM) word segment, a programer and a field selector. CONSTITUTION: The data are loaded to a four bits memory part 26 of a CAM word segment 12 through a memory bit line 22 when a word line selection signal 24 from a word address decoder is activated. The programer 14 decides a size of field, that is, the number of bits in the field of one word, and divides the field or cascade connects the field to a next unit cell according to logic levels of a field division signal 36 and its auxiliary signal 38. The output of the programer 14 is connected to a field selector 16, and selects a required field output (F1-F5) according to a field decoding signal 40 (FD1-FD5) generated by a field decoder. Thus, the waste of the bit is eliminated.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JPH02139797A
source esp@cenet
subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title VARIABLE FIELD CONTENT READING MEMORY
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T13%3A37%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JIYUNICHI%20SANO&rft.date=1990-05-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH02139797A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true