POLISHING AGENT FOR GALLIUM ARSENIDE
PURPOSE:To make it possible to obtain a high polishing speed, a small surface roughness and a small waviness by a method wherein the amount of sodium tripolyphosphate is contained in a polishing agent by 3.3-6.6 times in weight to an available chlorine. CONSTITUTION:In a polishing agent for gallium...
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| creator | MIYAZAKI KUNIHIRO TAKIYAMA MASAHIRO |
| description | PURPOSE:To make it possible to obtain a high polishing speed, a small surface roughness and a small waviness by a method wherein the amount of sodium tripolyphosphate is contained in a polishing agent by 3.3-6.6 times in weight to an available chlorine. CONSTITUTION:In a polishing agent for gallium arsenide and containing hypochlorite as its main component, the polishing agent contains sodium tripolyphosphate by 3.3-6.6 times in weight to an available chlorine (ClO). By adjusting the ratio of the sodium tripolyphosphate in the component of the polishing agent in such a way, the generation of active oxygen from the hypochlorite is increased to increase the forming speed of an oxide film and to increase a polishing speed on one side and a polishing surface is prevented from roughening and the surface roughness and waviness of the polishing surface can be made small on the other side. |
| format | Patent |
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CONSTITUTION:In a polishing agent for gallium arsenide and containing hypochlorite as its main component, the polishing agent contains sodium tripolyphosphate by 3.3-6.6 times in weight to an available chlorine (ClO<->). By adjusting the ratio of the sodium tripolyphosphate in the component of the polishing agent in such a way, the generation of active oxygen from the hypochlorite is increased to increase the forming speed of an oxide film and to increase a polishing speed on one side and a polishing surface is prevented from roughening and the surface roughness and waviness of the polishing surface can be made small on the other side.</description><language>eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; SEMICONDUCTOR DEVICES</subject><creationdate>1989</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19890411&DB=EPODOC&CC=JP&NR=H0191427A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19890411&DB=EPODOC&CC=JP&NR=H0191427A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIYAZAKI KUNIHIRO</creatorcontrib><creatorcontrib>TAKIYAMA MASAHIRO</creatorcontrib><title>POLISHING AGENT FOR GALLIUM ARSENIDE</title><description>PURPOSE:To make it possible to obtain a high polishing speed, a small surface roughness and a small waviness by a method wherein the amount of sodium tripolyphosphate is contained in a polishing agent by 3.3-6.6 times in weight to an available chlorine. CONSTITUTION:In a polishing agent for gallium arsenide and containing hypochlorite as its main component, the polishing agent contains sodium tripolyphosphate by 3.3-6.6 times in weight to an available chlorine (ClO<->). By adjusting the ratio of the sodium tripolyphosphate in the component of the polishing agent in such a way, the generation of active oxygen from the hypochlorite is increased to increase the forming speed of an oxide film and to increase a polishing speed on one side and a polishing surface is prevented from roughening and the surface roughness and waviness of the polishing surface can be made small on the other side.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1989</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAJ8PfxDPbw9HNXcHR39QtRcPMPUnB39PHxDPVVcAwKdvXzdHHlYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxXgEeBoaWhiZG5o7GRCgBADcTIrQ</recordid><startdate>19890411</startdate><enddate>19890411</enddate><creator>MIYAZAKI KUNIHIRO</creator><creator>TAKIYAMA MASAHIRO</creator><scope>EVB</scope></search><sort><creationdate>19890411</creationdate><title>POLISHING AGENT FOR GALLIUM ARSENIDE</title><author>MIYAZAKI KUNIHIRO ; TAKIYAMA MASAHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0191427A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1989</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MIYAZAKI KUNIHIRO</creatorcontrib><creatorcontrib>TAKIYAMA MASAHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIYAZAKI KUNIHIRO</au><au>TAKIYAMA MASAHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POLISHING AGENT FOR GALLIUM ARSENIDE</title><date>1989-04-11</date><risdate>1989</risdate><abstract>PURPOSE:To make it possible to obtain a high polishing speed, a small surface roughness and a small waviness by a method wherein the amount of sodium tripolyphosphate is contained in a polishing agent by 3.3-6.6 times in weight to an available chlorine. CONSTITUTION:In a polishing agent for gallium arsenide and containing hypochlorite as its main component, the polishing agent contains sodium tripolyphosphate by 3.3-6.6 times in weight to an available chlorine (ClO<->). By adjusting the ratio of the sodium tripolyphosphate in the component of the polishing agent in such a way, the generation of active oxygen from the hypochlorite is increased to increase the forming speed of an oxide film and to increase a polishing speed on one side and a polishing surface is prevented from roughening and the surface roughness and waviness of the polishing surface can be made small on the other side.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES |
| title | POLISHING AGENT FOR GALLIUM ARSENIDE |
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