CHARACTERISTIC ANALYSIS OF SEMICONDUCTOR INTEGRATED CIRCUIT
PURPOSE:To make it possible to measure circuit characteristics utilizing wiring for measurement by fixing the wiring for measurement, produced by irradiation of laser beams on wiring material, to the specified position of an IC chip where an element and wiring for circuit constitution are formed. CO...
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| creator | HIZAWA MAMORU |
| description | PURPOSE:To make it possible to measure circuit characteristics utilizing wiring for measurement by fixing the wiring for measurement, produced by irradiation of laser beams on wiring material, to the specified position of an IC chip where an element and wiring for circuit constitution are formed. CONSTITUTION:In an IC chip 1 a transistor 2 is already formed, and an emitter electrode 31 of the transistor 2, a base electrode 32 and a collector electrode 33 are connected to wirings 41, 42 and 43, respectively, in contact holes. When seeking to connect and short-circuit the wirings 41 and 42 with resistance wirings to analyze the characteristics of this element 2, powder-form or paste- form resistance material 50 is applied near the part to be connected, and it is fixed onto the chip surface as a resistance layer 5 by applying laser beams 6 to the part to be connected. And surplus resistant material 50 is removed by the use of wind pressure of a solvent. Making use of measurement wiring which is fixed this way and has the specified resistance value, the circuit characteristics can be measured. |
| format | Patent |
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CONSTITUTION:In an IC chip 1 a transistor 2 is already formed, and an emitter electrode 31 of the transistor 2, a base electrode 32 and a collector electrode 33 are connected to wirings 41, 42 and 43, respectively, in contact holes. When seeking to connect and short-circuit the wirings 41 and 42 with resistance wirings to analyze the characteristics of this element 2, powder-form or paste- form resistance material 50 is applied near the part to be connected, and it is fixed onto the chip surface as a resistance layer 5 by applying laser beams 6 to the part to be connected. And surplus resistant material 50 is removed by the use of wind pressure of a solvent. 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CONSTITUTION:In an IC chip 1 a transistor 2 is already formed, and an emitter electrode 31 of the transistor 2, a base electrode 32 and a collector electrode 33 are connected to wirings 41, 42 and 43, respectively, in contact holes. When seeking to connect and short-circuit the wirings 41 and 42 with resistance wirings to analyze the characteristics of this element 2, powder-form or paste- form resistance material 50 is applied near the part to be connected, and it is fixed onto the chip surface as a resistance layer 5 by applying laser beams 6 to the part to be connected. And surplus resistant material 50 is removed by the use of wind pressure of a solvent. 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CONSTITUTION:In an IC chip 1 a transistor 2 is already formed, and an emitter electrode 31 of the transistor 2, a base electrode 32 and a collector electrode 33 are connected to wirings 41, 42 and 43, respectively, in contact holes. When seeking to connect and short-circuit the wirings 41 and 42 with resistance wirings to analyze the characteristics of this element 2, powder-form or paste- form resistance material 50 is applied near the part to be connected, and it is fixed onto the chip surface as a resistance layer 5 by applying laser beams 6 to the part to be connected. And surplus resistant material 50 is removed by the use of wind pressure of a solvent. Making use of measurement wiring which is fixed this way and has the specified resistance value, the circuit characteristics can be measured.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | CHARACTERISTIC ANALYSIS OF SEMICONDUCTOR INTEGRATED CIRCUIT |
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