ACTIVE MATRIX DISPLAY DEVICE
PURPOSE:To lower the resistance of a gate bus wiring and to improve an image grade by bringing a light shielding film into contact with the gate bus wiring of a transistor, thereby making double wirings. CONSTITUTION:The light shielding film 8 which shields the projection of incident light to allow...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | MIYANOCHI MAKOTO |
| description | PURPOSE:To lower the resistance of a gate bus wiring and to improve an image grade by bringing a light shielding film into contact with the gate bus wiring of a transistor, thereby making double wirings. CONSTITUTION:The light shielding film 8 which shields the projection of incident light to allow transmission of a liquid crystal to a semiconductor thin film 5 is formed in said film; in addition, the light shielding film 8 is brought into contact with the gate bus wiring 7. Since the light shielding film 8 shields the irradiation of the incident light to the semiconductor thin film 5 and, therefore, the decrease of the off resistance of the thin-film transistor (TFT) which has the thin film 5 as a part of the constitution is prevented. Since the gate bus wiring 7 is double-wired, the resistance of the gate bus wiring is lowered. The large-sized active matrix display device having the high image grade is thereby obtd. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH01177020A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH01177020A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH01177020A3</originalsourceid><addsrcrecordid>eNrjZJBxdA7xDHNV8HUMCfKMUHDxDA7wcYxUcHEN83R25WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BHgaGhubmBkYGjsbEqAEAcJMg4A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ACTIVE MATRIX DISPLAY DEVICE</title><source>esp@cenet</source><creator>MIYANOCHI MAKOTO</creator><creatorcontrib>MIYANOCHI MAKOTO</creatorcontrib><description>PURPOSE:To lower the resistance of a gate bus wiring and to improve an image grade by bringing a light shielding film into contact with the gate bus wiring of a transistor, thereby making double wirings. CONSTITUTION:The light shielding film 8 which shields the projection of incident light to allow transmission of a liquid crystal to a semiconductor thin film 5 is formed in said film; in addition, the light shielding film 8 is brought into contact with the gate bus wiring 7. Since the light shielding film 8 shields the irradiation of the incident light to the semiconductor thin film 5 and, therefore, the decrease of the off resistance of the thin-film transistor (TFT) which has the thin film 5 as a part of the constitution is prevented. Since the gate bus wiring 7 is double-wired, the resistance of the gate bus wiring is lowered. The large-sized active matrix display device having the high image grade is thereby obtd.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>1989</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19890713&DB=EPODOC&CC=JP&NR=H01177020A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19890713&DB=EPODOC&CC=JP&NR=H01177020A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIYANOCHI MAKOTO</creatorcontrib><title>ACTIVE MATRIX DISPLAY DEVICE</title><description>PURPOSE:To lower the resistance of a gate bus wiring and to improve an image grade by bringing a light shielding film into contact with the gate bus wiring of a transistor, thereby making double wirings. CONSTITUTION:The light shielding film 8 which shields the projection of incident light to allow transmission of a liquid crystal to a semiconductor thin film 5 is formed in said film; in addition, the light shielding film 8 is brought into contact with the gate bus wiring 7. Since the light shielding film 8 shields the irradiation of the incident light to the semiconductor thin film 5 and, therefore, the decrease of the off resistance of the thin-film transistor (TFT) which has the thin film 5 as a part of the constitution is prevented. Since the gate bus wiring 7 is double-wired, the resistance of the gate bus wiring is lowered. The large-sized active matrix display device having the high image grade is thereby obtd.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FREQUENCY-CHANGING</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1989</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJBxdA7xDHNV8HUMCfKMUHDxDA7wcYxUcHEN83R25WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BHgaGhubmBkYGjsbEqAEAcJMg4A</recordid><startdate>19890713</startdate><enddate>19890713</enddate><creator>MIYANOCHI MAKOTO</creator><scope>EVB</scope></search><sort><creationdate>19890713</creationdate><title>ACTIVE MATRIX DISPLAY DEVICE</title><author>MIYANOCHI MAKOTO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH01177020A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1989</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FREQUENCY-CHANGING</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><toplevel>online_resources</toplevel><creatorcontrib>MIYANOCHI MAKOTO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIYANOCHI MAKOTO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ACTIVE MATRIX DISPLAY DEVICE</title><date>1989-07-13</date><risdate>1989</risdate><abstract>PURPOSE:To lower the resistance of a gate bus wiring and to improve an image grade by bringing a light shielding film into contact with the gate bus wiring of a transistor, thereby making double wirings. CONSTITUTION:The light shielding film 8 which shields the projection of incident light to allow transmission of a liquid crystal to a semiconductor thin film 5 is formed in said film; in addition, the light shielding film 8 is brought into contact with the gate bus wiring 7. Since the light shielding film 8 shields the irradiation of the incident light to the semiconductor thin film 5 and, therefore, the decrease of the off resistance of the thin-film transistor (TFT) which has the thin film 5 as a part of the constitution is prevented. Since the gate bus wiring 7 is double-wired, the resistance of the gate bus wiring is lowered. The large-sized active matrix display device having the high image grade is thereby obtd.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JPH01177020A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | ACTIVE MATRIX DISPLAY DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T02%3A29%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MIYANOCHI%20MAKOTO&rft.date=1989-07-13&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH01177020A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |