JPH0115149B

PURPOSE:To simplify processes, and to prevent the generation of a defective contact in an electrode contact section by providing a process forming an offset gate region and a pull-down resistor by implanting impurity ions of the same kind as pull-down resistor electrodes among these electrodes forme...

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1. Verfasser:	NABETA YASUMASA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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