MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To diffused an impurity in low concentration with good controllability by employing coating type thermal diffusion type in a step of channel doping at the time of manufacturing a MOS transistor. CONSTITUTION:A patterned semiconductor layer 2 is formed on an insulation substrate 1. It is coat...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NABESHIMA REIKO, WATANABE HIROBUMI, ABE SHUYA, MORI KOJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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