SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PURPOSE:To allow excessive carriers to be discharged and to improve breakdown voltages by providing in a substrate a region where conductivity is high, and reducing generation of excessive carriers within the substrate and a resistance against an accumulation region. CONSTITUTION:An N-channel MIS tr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MASUDA HIROO, MATSUO HITOSHI, TOYABE TATSU, PIITAA MOORISU RII
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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