MANUFACTURE OF INSULATED-GATE FIELD-EFFECT TRANSISTOR

PURPOSE:To reduce channel distances without deteriorating the characteristics by, after forming a source-drain region by means of ion implantation, removing a sidewall insulating film arranged on the sidewall of a gate and then rearranging thereon a sidewall silicon film. CONSTITUTION:After going through a processing step of ion implantation to form a source region 5 and a drain region 6, a sidewall silicon film 7 is arranged by removing, e.g., a sidewall oxide film 4 formed on a gate portion and newly coating thereon, e.g., silicon particles. Thus in a following step in which, e.g., a silicon oxide film is formed on the substrate 1, e.g., in oxygen atmosphere, oxygen is almost totally consumed for oxidizing the silicon film in the sidewall silicon film 7, whereby the substrate right below it is free from oxidation. According to the constitution, not only gate length changes due to generation of bird's beak but also isolation of the source and drain regions 5, 6 from an electrode 11 and its associated characteristic deteriorations can be prevented so that shorter channel distances can be realized.