GROWTH OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

PURPOSE:To accomplish growth of the above single crystal in high quality and yield using the LEC process, by facing the upper end of the outer circumference of a graphite crucible and the inner circumference of a thermal insulating plate each other and carrying out pulling of single crystal. CONSTIT...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MASUKATA YOSHIMASA, TAKAHASHI MICHIO, TAMAI FUJIO, KITAMURA KAZUNARI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!