GROWTH OF SINGLE CRYSTAL AND APPARATUS FOR PRODUCTION THEREOF

PURPOSE:To accomplish continuous growth of single crystal with stabilized quality, by continuously feeding the raw granules, while melting, to the bottom of a crucible without causing thermal convection and continuously pulling while keeping the level of the melt in the crucible constant. CONSTITUTI...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	TAKADA SHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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