GROWTH OF SINGLE CRYSTAL AND APPARATUS FOR PRODUCTION THEREOF
PURPOSE:To accomplish continuous growth of single crystal with stabilized quality, by continuously feeding the raw granules, while melting, to the bottom of a crucible without causing thermal convection and continuously pulling while keeping the level of the melt in the crucible constant. CONSTITUTI...
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| creator | TAKADA SHIKO |
| description | PURPOSE:To accomplish continuous growth of single crystal with stabilized quality, by continuously feeding the raw granules, while melting, to the bottom of a crucible without causing thermal convection and continuously pulling while keeping the level of the melt in the crucible constant. CONSTITUTION:A crucible 2 held in a susceptor 3 is revolved by a drive 4, and a melt put in the crucible 2 is heated by a heater 5 to pull an ingot 7 for the single crystal, a porous sleeve 11 consisting of porous matter is inserted into the inner sidewall of the crucible 2, and above it, the discharge pipe of a quantitative feeder 14 for raw granules is opened. In order to detect the level of the hot melt 6 in the crucible, gamma-rays are emitted 21 so as to cross diagonally through the melt surface, being detected by a detector 22 located at the counter position. And, the values thus detected enter the controller 23, which controls the quantitative feed drive 15 so as to keep the melt level constant. Thus, the objective single crystal with its length equivalent to that for the conventional two or more-batch operation can be obtained in one operation. |
| format | Patent |
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CONSTITUTION:A crucible 2 held in a susceptor 3 is revolved by a drive 4, and a melt put in the crucible 2 is heated by a heater 5 to pull an ingot 7 for the single crystal, a porous sleeve 11 consisting of porous matter is inserted into the inner sidewall of the crucible 2, and above it, the discharge pipe of a quantitative feeder 14 for raw granules is opened. In order to detect the level of the hot melt 6 in the crucible, gamma-rays are emitted 21 so as to cross diagonally through the melt surface, being detected by a detector 22 located at the counter position. And, the values thus detected enter the controller 23, which controls the quantitative feed drive 15 so as to keep the melt level constant. 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| language | eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | GROWTH OF SINGLE CRYSTAL AND APPARATUS FOR PRODUCTION THEREOF |
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