JP2950767B
A method for manufacturing self-aligned optic fiber-optic element coupling devices is described. The method comprises the steps of forming a first insulating film on a silicon substrate, forming metal pads on the first insulating film to have a predetermined separation distance, forming a second ins...
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| creator | RI JOKAN KIN KOBAN SHU KANSHO KIN TOKYU |
| description | A method for manufacturing self-aligned optic fiber-optic element coupling devices is described. The method comprises the steps of forming a first insulating film on a silicon substrate, forming metal pads on the first insulating film to have a predetermined separation distance, forming a second insulating film on the first insulating film and the metal pads, forming a photosensitive film to have first openings and a second opening, the first openings positioned on the metal pads with the metal pads partially covered with the second insulating films and the second opening positioned between the first openings on the first and second insulating films and extended to a side of the silicon substrate, removing the first and second insulating films exposed by the first and second openings using the photosensitive film as mask to exposure the silicon substrate and the metal pads, removing the photosensitive film, forming a V-shape groove in the exposed portion of the silicon substrate using the first and second insulating films as etching mask, and forming solder bumps on the metal pads. |
| format | Patent |
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The method comprises the steps of forming a first insulating film on a silicon substrate, forming metal pads on the first insulating film to have a predetermined separation distance, forming a second insulating film on the first insulating film and the metal pads, forming a photosensitive film to have first openings and a second opening, the first openings positioned on the metal pads with the metal pads partially covered with the second insulating films and the second opening positioned between the first openings on the first and second insulating films and extended to a side of the silicon substrate, removing the first and second insulating films exposed by the first and second openings using the photosensitive film as mask to exposure the silicon substrate and the metal pads, removing the photosensitive film, forming a V-shape groove in the exposed portion of the silicon substrate using the first and second insulating films as etching mask, and forming solder bumps on the metal pads.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990920&DB=EPODOC&CC=JP&NR=2950767B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990920&DB=EPODOC&CC=JP&NR=2950767B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RI JOKAN</creatorcontrib><creatorcontrib>KIN KOBAN</creatorcontrib><creatorcontrib>SHU KANSHO</creatorcontrib><creatorcontrib>KIN TOKYU</creatorcontrib><title>JP2950767B</title><description>A method for manufacturing self-aligned optic fiber-optic element coupling devices is described. The method comprises the steps of forming a first insulating film on a silicon substrate, forming metal pads on the first insulating film to have a predetermined separation distance, forming a second insulating film on the first insulating film and the metal pads, forming a photosensitive film to have first openings and a second opening, the first openings positioned on the metal pads with the metal pads partially covered with the second insulating films and the second opening positioned between the first openings on the first and second insulating films and extended to a side of the silicon substrate, removing the first and second insulating films exposed by the first and second openings using the photosensitive film as mask to exposure the silicon substrate and the metal pads, removing the photosensitive film, forming a V-shape groove in the exposed portion of the silicon substrate using the first and second insulating films as etching mask, and forming solder bumps on the metal pads.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZODyCjCyNDUwNzN34mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8QgNTkbGxKgBACqYG4U</recordid><startdate>19990920</startdate><enddate>19990920</enddate><creator>RI JOKAN</creator><creator>KIN KOBAN</creator><creator>SHU KANSHO</creator><creator>KIN TOKYU</creator><scope>EVB</scope></search><sort><creationdate>19990920</creationdate><title>JP2950767B</title><author>RI JOKAN ; KIN KOBAN ; SHU KANSHO ; KIN TOKYU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2950767BB23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>RI JOKAN</creatorcontrib><creatorcontrib>KIN KOBAN</creatorcontrib><creatorcontrib>SHU KANSHO</creatorcontrib><creatorcontrib>KIN TOKYU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RI JOKAN</au><au>KIN KOBAN</au><au>SHU KANSHO</au><au>KIN TOKYU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>JP2950767B</title><date>1999-09-20</date><risdate>1999</risdate><abstract>A method for manufacturing self-aligned optic fiber-optic element coupling devices is described. The method comprises the steps of forming a first insulating film on a silicon substrate, forming metal pads on the first insulating film to have a predetermined separation distance, forming a second insulating film on the first insulating film and the metal pads, forming a photosensitive film to have first openings and a second opening, the first openings positioned on the metal pads with the metal pads partially covered with the second insulating films and the second opening positioned between the first openings on the first and second insulating films and extended to a side of the silicon substrate, removing the first and second insulating films exposed by the first and second openings using the photosensitive film as mask to exposure the silicon substrate and the metal pads, removing the photosensitive film, forming a V-shape groove in the exposed portion of the silicon substrate using the first and second insulating films as etching mask, and forming solder bumps on the metal pads.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS SEMICONDUCTOR DEVICES |
| title | JP2950767B |
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