JP2933870B

PURPOSE: To provide a small-scale photodetector wherein a variety of amplifiers can be used and also provide a method for manufacturing such a device. CONSTITUTION: A first photodetecting section PD1 consists of an N-type first impurity region 4 formed in a P-type semiconductor substrate 3 and a P-t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OIMURA KATSUHIKO, USUKUBO HIDEAKI, OOSAWA KATSUICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!