JP2916615B
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| creator | YAMAGUCHI ITSUKI KONDO WAKICHI MANABE TAKAAKI KIN SHOGEN MIZUTA SUSUMU KUMAGAI TOSHA |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2916615BB2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2916615BB2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2916615BB23</originalsourceid><addsrcrecordid>eNrjZODyCjCyNDQzMzR14mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8QgNTkbGxKgBACdZG3M</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>JP2916615B</title><source>esp@cenet</source><creator>YAMAGUCHI ITSUKI ; KONDO WAKICHI ; MANABE TAKAAKI ; KIN SHOGEN ; MIZUTA SUSUMU ; KUMAGAI TOSHA</creator><creatorcontrib>YAMAGUCHI ITSUKI ; KONDO WAKICHI ; MANABE TAKAAKI ; KIN SHOGEN ; MIZUTA SUSUMU ; KUMAGAI TOSHA</creatorcontrib><edition>6</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CABLES ; CHEMISTRY ; CONDUCTORS ; CRYSTAL GROWTH ; ELECTRICITY ; INSULATORS ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990705&DB=EPODOC&CC=JP&NR=2916615B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990705&DB=EPODOC&CC=JP&NR=2916615B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMAGUCHI ITSUKI</creatorcontrib><creatorcontrib>KONDO WAKICHI</creatorcontrib><creatorcontrib>MANABE TAKAAKI</creatorcontrib><creatorcontrib>KIN SHOGEN</creatorcontrib><creatorcontrib>MIZUTA SUSUMU</creatorcontrib><creatorcontrib>KUMAGAI TOSHA</creatorcontrib><title>JP2916615B</title><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CHEMISTRY</subject><subject>CONDUCTORS</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRICITY</subject><subject>INSULATORS</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZODyCjCyNDQzMzR14mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8QgNTkbGxKgBACdZG3M</recordid><startdate>19990705</startdate><enddate>19990705</enddate><creator>YAMAGUCHI ITSUKI</creator><creator>KONDO WAKICHI</creator><creator>MANABE TAKAAKI</creator><creator>KIN SHOGEN</creator><creator>MIZUTA SUSUMU</creator><creator>KUMAGAI TOSHA</creator><scope>EVB</scope></search><sort><creationdate>19990705</creationdate><title>JP2916615B</title><author>YAMAGUCHI ITSUKI ; KONDO WAKICHI ; MANABE TAKAAKI ; KIN SHOGEN ; MIZUTA SUSUMU ; KUMAGAI TOSHA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2916615BB23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CHEMISTRY</topic><topic>CONDUCTORS</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRICITY</topic><topic>INSULATORS</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMAGUCHI ITSUKI</creatorcontrib><creatorcontrib>KONDO WAKICHI</creatorcontrib><creatorcontrib>MANABE TAKAAKI</creatorcontrib><creatorcontrib>KIN SHOGEN</creatorcontrib><creatorcontrib>MIZUTA SUSUMU</creatorcontrib><creatorcontrib>KUMAGAI TOSHA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMAGUCHI ITSUKI</au><au>KONDO WAKICHI</au><au>MANABE TAKAAKI</au><au>KIN SHOGEN</au><au>MIZUTA SUSUMU</au><au>KUMAGAI TOSHA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>JP2916615B</title><date>1999-07-05</date><risdate>1999</risdate><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| language | eng |
| recordid | cdi_epo_espacenet_JP2916615BB2 |
| source | esp@cenet |
| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CABLES CHEMISTRY CONDUCTORS CRYSTAL GROWTH ELECTRICITY INSULATORS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | JP2916615B |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T20%3A44%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YAMAGUCHI%20ITSUKI&rft.date=1999-07-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2916615BB2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |