JP2914172B

PURPOSE:To ensure superior dry etching resistance and resolution and to enhance sensitivity by developing a resist whose materials and compsn. have been made optimum with a developer having a specified compsn. CONSTITUTION:This electron beam resist compsn. contains cresol novolak resin, additives re...

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Bibliographische Detailangaben
Hauptverfasser:	OOSETO HIROKI, KATAOKA MUTSUO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To ensure superior dry etching resistance and resolution and to enhance sensitivity by developing a resist whose materials and compsn. have been made optimum with a developer having a specified compsn. CONSTITUTION:This electron beam resist compsn. contains cresol novolak resin, additives represented by formulae I, II and a quinonediazido compd. obtd. by allowing methyl gallate to react with 1,2-naphtho-quinonediazido-4-sulfonyl chloride as essential components. The content of the additives in the solid components of the resulting resist is 5-20wt.%, the content of the quinonediazido compd. in the solid components is 10-20wt.% and the content of triester in the quinonediazido compd. is 30-55wt.%. In the formula I, each or of R -R is H, alkyl or aryl, each of R -R is H or alkyl, 0