JP2907122B

JP2907122B

In a process for forming a storage node electrode in the COB structure DRAM, after a titanium nitride film is formed on a surface of a second interlayer insulator film, a node contact hole is formed to penetrate through the titanium nitride film and the underlying interlayer insulator films, and the...

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1. Verfasser: HIROTA TOSHUKI
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description In a process for forming a storage node electrode in the COB structure DRAM, after a titanium nitride film is formed on a surface of a second interlayer insulator film, a node contact hole is formed to penetrate through the titanium nitride film and the underlying interlayer insulator films, and then, an N+ polysilicon film is formed to cover the titanium nitride film and to fill the node contact hole. This N+ polysilicon film is patterned by an anisotropic dry etching to form a silicon film pattern. An exposed titanium nitride film which is not covered by the silicon film pattern is converted into a titanium oxide. Thus, a storage node electrode is formed of the silicon film pattern and the titanium nitride film remaining under the silicon film pattern, with no notch being formed in the storage node electrode.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2907122BB2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2907122BB2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2907122BB23</originalsourceid><addsrcrecordid>eNrjZODyCjCyNDA3NDJy4mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8QgNTkbGxKgBACODG14</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>JP2907122B</title><source>esp@cenet</source><creator>HIROTA TOSHUKI</creator><creatorcontrib>HIROTA TOSHUKI</creatorcontrib><description>In a process for forming a storage node electrode in the COB structure DRAM, after a titanium nitride film is formed on a surface of a second interlayer insulator film, a node contact hole is formed to penetrate through the titanium nitride film and the underlying interlayer insulator films, and then, an N+ polysilicon film is formed to cover the titanium nitride film and to fill the node contact hole. This N+ polysilicon film is patterned by an anisotropic dry etching to form a silicon film pattern. An exposed titanium nitride film which is not covered by the silicon film pattern is converted into a titanium oxide. Thus, a storage node electrode is formed of the silicon film pattern and the titanium nitride film remaining under the silicon film pattern, with no notch being formed in the storage node electrode.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19990621&amp;DB=EPODOC&amp;CC=JP&amp;NR=2907122B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19990621&amp;DB=EPODOC&amp;CC=JP&amp;NR=2907122B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HIROTA TOSHUKI</creatorcontrib><title>JP2907122B</title><description>In a process for forming a storage node electrode in the COB structure DRAM, after a titanium nitride film is formed on a surface of a second interlayer insulator film, a node contact hole is formed to penetrate through the titanium nitride film and the underlying interlayer insulator films, and then, an N+ polysilicon film is formed to cover the titanium nitride film and to fill the node contact hole. This N+ polysilicon film is patterned by an anisotropic dry etching to form a silicon film pattern. An exposed titanium nitride film which is not covered by the silicon film pattern is converted into a titanium oxide. Thus, a storage node electrode is formed of the silicon film pattern and the titanium nitride film remaining under the silicon film pattern, with no notch being formed in the storage node electrode.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZODyCjCyNDA3NDJy4mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8QgNTkbGxKgBACODG14</recordid><startdate>19990621</startdate><enddate>19990621</enddate><creator>HIROTA TOSHUKI</creator><scope>EVB</scope></search><sort><creationdate>19990621</creationdate><title>JP2907122B</title><author>HIROTA TOSHUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2907122BB23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HIROTA TOSHUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HIROTA TOSHUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>JP2907122B</title><date>1999-06-21</date><risdate>1999</risdate><abstract>In a process for forming a storage node electrode in the COB structure DRAM, after a titanium nitride film is formed on a surface of a second interlayer insulator film, a node contact hole is formed to penetrate through the titanium nitride film and the underlying interlayer insulator films, and then, an N+ polysilicon film is formed to cover the titanium nitride film and to fill the node contact hole. This N+ polysilicon film is patterned by an anisotropic dry etching to form a silicon film pattern. An exposed titanium nitride film which is not covered by the silicon film pattern is converted into a titanium oxide. Thus, a storage node electrode is formed of the silicon film pattern and the titanium nitride film remaining under the silicon film pattern, with no notch being formed in the storage node electrode.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title JP2907122B
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T01%3A23%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HIROTA%20TOSHUKI&rft.date=1999-06-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2907122BB2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true