JP2870842B
PURPOSE:To simplify formation and measurement of a sample and to correctly quantitate the concentration of specific impurities by making a standard sample of a known concentration and converting the yield of secondary ions with respect to a sample to be measured to the concentration of the impuritie...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KATO YASABURO SUZUKI TOSHIHIKO TANIGAKI TAKESHIGE |
| description | PURPOSE:To simplify formation and measurement of a sample and to correctly quantitate the concentration of specific impurities by making a standard sample of a known concentration and converting the yield of secondary ions with respect to a sample to be measured to the concentration of the impurities. CONSTITUTION:An SiO2 thin film 2 and a polycrystal Si thin film 3 are formed on an Si basepiece 1. A P ion of an element to be measured is injected from the surface of the thin film 3 so that the concentration of ion at the interface between the thin films 2 and 3 becomes a predetermined value. Thus, a standard sample 4 having a known distribution of concentration is obtained. A concentration curve after the discontinuous correction is made at the interface between the thin films 2 and 3 is formed. Accordingly, even when a sample to be measured is in the layered structure of two or more kinds of material, a comparison between the secondary ion yield obtained by a mass spectrometer through SIMS method and impurities can be performed by one standard sample. Moreover, a standard sample can be obtained in a simplified manner and the concentration of impurities of a sample to be measured can be easily quantitated. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2870842BB2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2870842BB2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2870842BB23</originalsourceid><addsrcrecordid>eNrjZODyCjCyMDewMDFy4mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8QgNTkbGxKgBACf5G3Y</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>JP2870842B</title><source>esp@cenet</source><creator>KATO YASABURO ; SUZUKI TOSHIHIKO ; TANIGAKI TAKESHIGE</creator><creatorcontrib>KATO YASABURO ; SUZUKI TOSHIHIKO ; TANIGAKI TAKESHIGE</creatorcontrib><description>PURPOSE:To simplify formation and measurement of a sample and to correctly quantitate the concentration of specific impurities by making a standard sample of a known concentration and converting the yield of secondary ions with respect to a sample to be measured to the concentration of the impurities. CONSTITUTION:An SiO2 thin film 2 and a polycrystal Si thin film 3 are formed on an Si basepiece 1. A P ion of an element to be measured is injected from the surface of the thin film 3 so that the concentration of ion at the interface between the thin films 2 and 3 becomes a predetermined value. Thus, a standard sample 4 having a known distribution of concentration is obtained. A concentration curve after the discontinuous correction is made at the interface between the thin films 2 and 3 is formed. Accordingly, even when a sample to be measured is in the layered structure of two or more kinds of material, a comparison between the secondary ion yield obtained by a mass spectrometer through SIMS method and impurities can be performed by one standard sample. Moreover, a standard sample can be obtained in a simplified manner and the concentration of impurities of a sample to be measured can be easily quantitated.</description><edition>6</edition><language>eng</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; TESTING</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990317&DB=EPODOC&CC=JP&NR=2870842B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990317&DB=EPODOC&CC=JP&NR=2870842B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KATO YASABURO</creatorcontrib><creatorcontrib>SUZUKI TOSHIHIKO</creatorcontrib><creatorcontrib>TANIGAKI TAKESHIGE</creatorcontrib><title>JP2870842B</title><description>PURPOSE:To simplify formation and measurement of a sample and to correctly quantitate the concentration of specific impurities by making a standard sample of a known concentration and converting the yield of secondary ions with respect to a sample to be measured to the concentration of the impurities. CONSTITUTION:An SiO2 thin film 2 and a polycrystal Si thin film 3 are formed on an Si basepiece 1. A P ion of an element to be measured is injected from the surface of the thin film 3 so that the concentration of ion at the interface between the thin films 2 and 3 becomes a predetermined value. Thus, a standard sample 4 having a known distribution of concentration is obtained. A concentration curve after the discontinuous correction is made at the interface between the thin films 2 and 3 is formed. Accordingly, even when a sample to be measured is in the layered structure of two or more kinds of material, a comparison between the secondary ion yield obtained by a mass spectrometer through SIMS method and impurities can be performed by one standard sample. Moreover, a standard sample can be obtained in a simplified manner and the concentration of impurities of a sample to be measured can be easily quantitated.</description><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZODyCjCyMDewMDFy4mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8QgNTkbGxKgBACf5G3Y</recordid><startdate>19990317</startdate><enddate>19990317</enddate><creator>KATO YASABURO</creator><creator>SUZUKI TOSHIHIKO</creator><creator>TANIGAKI TAKESHIGE</creator><scope>EVB</scope></search><sort><creationdate>19990317</creationdate><title>JP2870842B</title><author>KATO YASABURO ; SUZUKI TOSHIHIKO ; TANIGAKI TAKESHIGE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2870842BB23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KATO YASABURO</creatorcontrib><creatorcontrib>SUZUKI TOSHIHIKO</creatorcontrib><creatorcontrib>TANIGAKI TAKESHIGE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KATO YASABURO</au><au>SUZUKI TOSHIHIKO</au><au>TANIGAKI TAKESHIGE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>JP2870842B</title><date>1999-03-17</date><risdate>1999</risdate><abstract>PURPOSE:To simplify formation and measurement of a sample and to correctly quantitate the concentration of specific impurities by making a standard sample of a known concentration and converting the yield of secondary ions with respect to a sample to be measured to the concentration of the impurities. CONSTITUTION:An SiO2 thin film 2 and a polycrystal Si thin film 3 are formed on an Si basepiece 1. A P ion of an element to be measured is injected from the surface of the thin film 3 so that the concentration of ion at the interface between the thin films 2 and 3 becomes a predetermined value. Thus, a standard sample 4 having a known distribution of concentration is obtained. A concentration curve after the discontinuous correction is made at the interface between the thin films 2 and 3 is formed. Accordingly, even when a sample to be measured is in the layered structure of two or more kinds of material, a comparison between the secondary ion yield obtained by a mass spectrometer through SIMS method and impurities can be performed by one standard sample. Moreover, a standard sample can be obtained in a simplified manner and the concentration of impurities of a sample to be measured can be easily quantitated.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2870842BB2 |
| source | esp@cenet |
| subjects | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING |
| title | JP2870842B |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T05%3A59%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KATO%20YASABURO&rft.date=1999-03-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2870842BB2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |