JP2550368B
PURPOSE:To avoid the deterioration of a device and improve a selectivity by a method wherein a radio frequency source whose frequency is lower than 13.86MHz is employed in a magnetically enhanced etching equipment in which a magnetic field is introduced into a radio frequency discharge. CONSTITUTION...
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| creator | KAKEHI YUTAKA UEYAMA KEIJI OOMOTO YUTAKA KAWASAKI YOSHINAO |
| description | PURPOSE:To avoid the deterioration of a device and improve a selectivity by a method wherein a radio frequency source whose frequency is lower than 13.86MHz is employed in a magnetically enhanced etching equipment in which a magnetic field is introduced into a radio frequency discharge. CONSTITUTION:When a radio frequency voltage is applied to a cathode 3 by a radio frequency source 6, an electric field is formed in the space between the cathode 3 and an anode 2 and a plasma is generated by a magnetic field produced by a magnet element 9. The frequency of the source 6 is higher than 800kHz and lower than 13.86MHz. In this process, a somewhat higher electric field is obtained on a cathode sheath than in a conventional process and the decomposition of CF system gas in the plasma near a wafer is promoted to produce carbon-rich fluorocarbon. With this constitution, the deterioration of the device can be avoided and a selectivity can be improved. |
| format | Patent |
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CONSTITUTION:When a radio frequency voltage is applied to a cathode 3 by a radio frequency source 6, an electric field is formed in the space between the cathode 3 and an anode 2 and a plasma is generated by a magnetic field produced by a magnet element 9. The frequency of the source 6 is higher than 800kHz and lower than 13.86MHz. In this process, a somewhat higher electric field is obtained on a cathode sheath than in a conventional process and the decomposition of CF system gas in the plasma near a wafer is promoted to produce carbon-rich fluorocarbon. With this constitution, the deterioration of the device can be avoided and a selectivity can be improved.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19961106&DB=EPODOC&CC=JP&NR=2550368B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19961106&DB=EPODOC&CC=JP&NR=2550368B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAKEHI YUTAKA</creatorcontrib><creatorcontrib>UEYAMA KEIJI</creatorcontrib><creatorcontrib>OOMOTO YUTAKA</creatorcontrib><creatorcontrib>KAWASAKI YOSHINAO</creatorcontrib><title>JP2550368B</title><description>PURPOSE:To avoid the deterioration of a device and improve a selectivity by a method wherein a radio frequency source whose frequency is lower than 13.86MHz is employed in a magnetically enhanced etching equipment in which a magnetic field is introduced into a radio frequency discharge. 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With this constitution, the deterioration of the device can be avoided and a selectivity can be improved.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1996</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZODyCjAyNTUwNrNw4mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8QgNTkbGxKgBACaMG3A</recordid><startdate>19961106</startdate><enddate>19961106</enddate><creator>KAKEHI YUTAKA</creator><creator>UEYAMA KEIJI</creator><creator>OOMOTO YUTAKA</creator><creator>KAWASAKI YOSHINAO</creator><scope>EVB</scope></search><sort><creationdate>19961106</creationdate><title>JP2550368B</title><author>KAKEHI YUTAKA ; UEYAMA KEIJI ; OOMOTO YUTAKA ; KAWASAKI YOSHINAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2550368BB23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1996</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KAKEHI YUTAKA</creatorcontrib><creatorcontrib>UEYAMA KEIJI</creatorcontrib><creatorcontrib>OOMOTO YUTAKA</creatorcontrib><creatorcontrib>KAWASAKI YOSHINAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAKEHI YUTAKA</au><au>UEYAMA KEIJI</au><au>OOMOTO YUTAKA</au><au>KAWASAKI YOSHINAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>JP2550368B</title><date>1996-11-06</date><risdate>1996</risdate><abstract>PURPOSE:To avoid the deterioration of a device and improve a selectivity by a method wherein a radio frequency source whose frequency is lower than 13.86MHz is employed in a magnetically enhanced etching equipment in which a magnetic field is introduced into a radio frequency discharge. CONSTITUTION:When a radio frequency voltage is applied to a cathode 3 by a radio frequency source 6, an electric field is formed in the space between the cathode 3 and an anode 2 and a plasma is generated by a magnetic field produced by a magnet element 9. The frequency of the source 6 is higher than 800kHz and lower than 13.86MHz. In this process, a somewhat higher electric field is obtained on a cathode sheath than in a conventional process and the decomposition of CF system gas in the plasma near a wafer is promoted to produce carbon-rich fluorocarbon. With this constitution, the deterioration of the device can be avoided and a selectivity can be improved.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES |
| title | JP2550368B |
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