JP2542876B

Various solid-state overvoltage protection devices, preferably formed of deposited thin film materials including Ovonic threshold switching materials, are disclosed. The devices each typically have at least one elongated current conductive path through an elongated cross-sectional area of the thresh...

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Bibliographische Detailangaben

Hauptverfasser:	SUTANFUOODO AARU OBUSHINSUKII, NAHOREON PII FUOOMIGONI, ROJAA DABURYU PUREIAA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS GENERATION SEMICONDUCTOR DEVICES
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