JP2507059B

PURPOSE:To efficiently carry out treatment such as film formation for large area to reduce the cost of the product and improve the yield by causing a microwave plasma source to consist of a hollow cylindrical body and providing a plasma chamber having an aperture in the peripheral surface thereof and forming plasma radially in the peripheral direction of the plasma chamber. CONSTITUTION:When a silicon PIN diode element is manufactured, argon plasma is formed in a plasma chamber 6. A substrate 14 to be treated, which is supplied from a loader 19, is formed with a P-layer in a treatment chamber 27a. At that time, mixed gas consisting of silane and diborane is supplied from a gas introducing system 9a. These gases are decomposed by argon plasma from the plasma chamber 6 to form a silicon film (P-layer). Treated substrate 14, on which the P-layer is formed, is sent to a treatment chamber 27b, by a transfer system 15 through a preparation chamber 28a, into which only silane gas is supplied from a gas introducing system 9b to form an I-layer of amorphous silicon on the P-layer. Then, the treated substrate 14 is sent to a treatment chamber 27c, into which mixed gas consisting of silane and phosphine is supplied from a gas introducing system 9c to form a silicon layer (N-layer) is formed on the I-layer.