RESIN COMPOSITION, RESIN FILM FOR PROTECTIVE FILM FORMATION, COMPOSITE SHEET FOR PROTECTIVE FILM FORMATION, SEMICONDUCTOR CHIP WITH PROTECTIVE FILM, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
To provide a resin composition for forming a protective film on a surface with a bump of a semiconductor chip and having the excellent embedding property of the bump, fire retardancy and film formation property of the protective film, a resin film for protective film formation using the resin compos...
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| creator | UEMURA KAZUE SAEKI NAOYA |
| description | To provide a resin composition for forming a protective film on a surface with a bump of a semiconductor chip and having the excellent embedding property of the bump, fire retardancy and film formation property of the protective film, a resin film for protective film formation using the resin composition, a composite sheet for protective film formation, a semiconductor chip with a protective film, a semiconductor device and a manufacturing method of the semiconductor device.SOLUTION: There is provided a resin composition for forming a protective film on a surface with a bump of a semiconductor chip. The resin composition contains a thermoplastic component (A), a thermosetting component (B) and a nitrogen atom-containing flame retardant (C), the content of the nitrogen atom-containing flame retardant (C) being 2 to 25 mass% with respect to the total amount (100 mass%) of components excluding an inorganic filler in the solid content of the resin composition. This are also provided a resin film for protective film formation using the resin composition, a composite sheet for protective film formation, a semiconductor chip with protective film, a semiconductor device and a manufacturing method of the semiconductor device.SELECTED DRAWING: Figure 1
【課題】半導体チップのバンプを有する面に保護膜を形成するための樹脂組成物であり、バンプの埋め込み性、保護膜の難燃性及び造膜性に優れる樹脂組成物、該樹脂組成物を用いた保護膜形成用樹脂フィルム、保護膜形成用複合シート、保護膜付き半導体チップ、半導体装置及び半導体装置の製造方法を提供する。【解決手段】半導体チップのバンプを有する面に保護膜を形成するための樹脂組成物であり、熱可塑性成分（Ａ）、熱硬化性成分（Ｂ）及び窒素原子含有難燃剤（Ｃ）を含有し、前記窒素原子含有難燃剤（Ｃ）の含有量が、前記樹脂組成物の固形分のうち無機充填材を除く成分の総量（１００質量％）に対して、２～２５質量％である、樹脂組成物、該樹脂組成物を用いた保護膜形成用樹脂フィルム、保護膜形成用複合シート、保護膜付き半導体チップ、半導体装置及び半導体装置の製造方法である。【選択図】図１ |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2024118871A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2024118871A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2024118871A3</originalsourceid><addsrcrecordid>eNqNy7EKwjAUheEuDqK-w8VZwVbBriG9MVdMUtLbOpYicRIt1Kf1aRSqDiLodODw_cPo5rEgC9KZ3BXE5OwM-kvRzoByHnLvGCVThe_PiF6-MoRCI_IvXqAh6WxWSn5AqSmHPbH-TD5hhhVJBGEzMMKWSkguPdkNGGTtMnDqazCOBsfm1IXJc0fRVCFLPQ_tpQ5d2xzCOVzrbZ4sklUcp-k6Fsu_0B0OnVXg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>RESIN COMPOSITION, RESIN FILM FOR PROTECTIVE FILM FORMATION, COMPOSITE SHEET FOR PROTECTIVE FILM FORMATION, SEMICONDUCTOR CHIP WITH PROTECTIVE FILM, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>UEMURA KAZUE ; SAEKI NAOYA</creator><creatorcontrib>UEMURA KAZUE ; SAEKI NAOYA</creatorcontrib><description>To provide a resin composition for forming a protective film on a surface with a bump of a semiconductor chip and having the excellent embedding property of the bump, fire retardancy and film formation property of the protective film, a resin film for protective film formation using the resin composition, a composite sheet for protective film formation, a semiconductor chip with a protective film, a semiconductor device and a manufacturing method of the semiconductor device.SOLUTION: There is provided a resin composition for forming a protective film on a surface with a bump of a semiconductor chip. The resin composition contains a thermoplastic component (A), a thermosetting component (B) and a nitrogen atom-containing flame retardant (C), the content of the nitrogen atom-containing flame retardant (C) being 2 to 25 mass% with respect to the total amount (100 mass%) of components excluding an inorganic filler in the solid content of the resin composition. This are also provided a resin film for protective film formation using the resin composition, a composite sheet for protective film formation, a semiconductor chip with protective film, a semiconductor device and a manufacturing method of the semiconductor device.SELECTED DRAWING: Figure 1
【課題】半導体チップのバンプを有する面に保護膜を形成するための樹脂組成物であり、バンプの埋め込み性、保護膜の難燃性及び造膜性に優れる樹脂組成物、該樹脂組成物を用いた保護膜形成用樹脂フィルム、保護膜形成用複合シート、保護膜付き半導体チップ、半導体装置及び半導体装置の製造方法を提供する。【解決手段】半導体チップのバンプを有する面に保護膜を形成するための樹脂組成物であり、熱可塑性成分（Ａ）、熱硬化性成分（Ｂ）及び窒素原子含有難燃剤（Ｃ）を含有し、前記窒素原子含有難燃剤（Ｃ）の含有量が、前記樹脂組成物の固形分のうち無機充填材を除く成分の総量（１００質量％）に対して、２～２５質量％である、樹脂組成物、該樹脂組成物を用いた保護膜形成用樹脂フィルム、保護膜形成用複合シート、保護膜付き半導体チップ、半導体装置及び半導体装置の製造方法である。【選択図】図１</description><language>eng ; jpn</language><subject>ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE ; ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL ; PAINTS ; POLISHES ; SEMICONDUCTOR DEVICES ; USE OF MATERIALS AS ADHESIVES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240902&DB=EPODOC&CC=JP&NR=2024118871A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240902&DB=EPODOC&CC=JP&NR=2024118871A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UEMURA KAZUE</creatorcontrib><creatorcontrib>SAEKI NAOYA</creatorcontrib><title>RESIN COMPOSITION, RESIN FILM FOR PROTECTIVE FILM FORMATION, COMPOSITE SHEET FOR PROTECTIVE FILM FORMATION, SEMICONDUCTOR CHIP WITH PROTECTIVE FILM, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><description>To provide a resin composition for forming a protective film on a surface with a bump of a semiconductor chip and having the excellent embedding property of the bump, fire retardancy and film formation property of the protective film, a resin film for protective film formation using the resin composition, a composite sheet for protective film formation, a semiconductor chip with a protective film, a semiconductor device and a manufacturing method of the semiconductor device.SOLUTION: There is provided a resin composition for forming a protective film on a surface with a bump of a semiconductor chip. The resin composition contains a thermoplastic component (A), a thermosetting component (B) and a nitrogen atom-containing flame retardant (C), the content of the nitrogen atom-containing flame retardant (C) being 2 to 25 mass% with respect to the total amount (100 mass%) of components excluding an inorganic filler in the solid content of the resin composition. This are also provided a resin film for protective film formation using the resin composition, a composite sheet for protective film formation, a semiconductor chip with protective film, a semiconductor device and a manufacturing method of the semiconductor device.SELECTED DRAWING: Figure 1
【課題】半導体チップのバンプを有する面に保護膜を形成するための樹脂組成物であり、バンプの埋め込み性、保護膜の難燃性及び造膜性に優れる樹脂組成物、該樹脂組成物を用いた保護膜形成用樹脂フィルム、保護膜形成用複合シート、保護膜付き半導体チップ、半導体装置及び半導体装置の製造方法を提供する。【解決手段】半導体チップのバンプを有する面に保護膜を形成するための樹脂組成物であり、熱可塑性成分（Ａ）、熱硬化性成分（Ｂ）及び窒素原子含有難燃剤（Ｃ）を含有し、前記窒素原子含有難燃剤（Ｃ）の含有量が、前記樹脂組成物の固形分のうち無機充填材を除く成分の総量（１００質量％）に対して、２～２５質量％である、樹脂組成物、該樹脂組成物を用いた保護膜形成用樹脂フィルム、保護膜形成用複合シート、保護膜付き半導体チップ、半導体装置及び半導体装置の製造方法である。【選択図】図１</description><subject>ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE</subject><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>USE OF MATERIALS AS ADHESIVES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy7EKwjAUheEuDqK-w8VZwVbBriG9MVdMUtLbOpYicRIt1Kf1aRSqDiLodODw_cPo5rEgC9KZ3BXE5OwM-kvRzoByHnLvGCVThe_PiF6-MoRCI_IvXqAh6WxWSn5AqSmHPbH-TD5hhhVJBGEzMMKWSkguPdkNGGTtMnDqazCOBsfm1IXJc0fRVCFLPQ_tpQ5d2xzCOVzrbZ4sklUcp-k6Fsu_0B0OnVXg</recordid><startdate>20240902</startdate><enddate>20240902</enddate><creator>UEMURA KAZUE</creator><creator>SAEKI NAOYA</creator><scope>EVB</scope></search><sort><creationdate>20240902</creationdate><title>RESIN COMPOSITION, RESIN FILM FOR PROTECTIVE FILM FORMATION, COMPOSITE SHEET FOR PROTECTIVE FILM FORMATION, SEMICONDUCTOR CHIP WITH PROTECTIVE FILM, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><author>UEMURA KAZUE ; SAEKI NAOYA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2024118871A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2024</creationdate><topic>ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE</topic><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>USE OF MATERIALS AS ADHESIVES</topic><toplevel>online_resources</toplevel><creatorcontrib>UEMURA KAZUE</creatorcontrib><creatorcontrib>SAEKI NAOYA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UEMURA KAZUE</au><au>SAEKI NAOYA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RESIN COMPOSITION, RESIN FILM FOR PROTECTIVE FILM FORMATION, COMPOSITE SHEET FOR PROTECTIVE FILM FORMATION, SEMICONDUCTOR CHIP WITH PROTECTIVE FILM, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><date>2024-09-02</date><risdate>2024</risdate><abstract>To provide a resin composition for forming a protective film on a surface with a bump of a semiconductor chip and having the excellent embedding property of the bump, fire retardancy and film formation property of the protective film, a resin film for protective film formation using the resin composition, a composite sheet for protective film formation, a semiconductor chip with a protective film, a semiconductor device and a manufacturing method of the semiconductor device.SOLUTION: There is provided a resin composition for forming a protective film on a surface with a bump of a semiconductor chip. The resin composition contains a thermoplastic component (A), a thermosetting component (B) and a nitrogen atom-containing flame retardant (C), the content of the nitrogen atom-containing flame retardant (C) being 2 to 25 mass% with respect to the total amount (100 mass%) of components excluding an inorganic filler in the solid content of the resin composition. This are also provided a resin film for protective film formation using the resin composition, a composite sheet for protective film formation, a semiconductor chip with protective film, a semiconductor device and a manufacturing method of the semiconductor device.SELECTED DRAWING: Figure 1
【課題】半導体チップのバンプを有する面に保護膜を形成するための樹脂組成物であり、バンプの埋め込み性、保護膜の難燃性及び造膜性に優れる樹脂組成物、該樹脂組成物を用いた保護膜形成用樹脂フィルム、保護膜形成用複合シート、保護膜付き半導体チップ、半導体装置及び半導体装置の製造方法を提供する。【解決手段】半導体チップのバンプを有する面に保護膜を形成するための樹脂組成物であり、熱可塑性成分（Ａ）、熱硬化性成分（Ｂ）及び窒素原子含有難燃剤（Ｃ）を含有し、前記窒素原子含有難燃剤（Ｃ）の含有量が、前記樹脂組成物の固形分のうち無機充填材を除く成分の総量（１００質量％）に対して、２～２５質量％である、樹脂組成物、該樹脂組成物を用いた保護膜形成用樹脂フィルム、保護膜形成用複合シート、保護膜付き半導体チップ、半導体装置及び半導体装置の製造方法である。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL PAINTS POLISHES SEMICONDUCTOR DEVICES USE OF MATERIALS AS ADHESIVES |
| title | RESIN COMPOSITION, RESIN FILM FOR PROTECTIVE FILM FORMATION, COMPOSITE SHEET FOR PROTECTIVE FILM FORMATION, SEMICONDUCTOR CHIP WITH PROTECTIVE FILM, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
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