RECESS FILLING METHOD AND PLASMA TREATMENT DEVICE
To increase the precision in filling films into a recess.SOLUTION: Provided is a recess filling method comprising the steps of: preparing a substrate having a recess on a mounting table; applying a pulsed first DC voltage to the mounting table and forming a dielectric film in the recess with plasma...
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| creator | NOGAMI TAKAFUMI KOTE KENICHI |
| description | To increase the precision in filling films into a recess.SOLUTION: Provided is a recess filling method comprising the steps of: preparing a substrate having a recess on a mounting table; applying a pulsed first DC voltage to the mounting table and forming a dielectric film in the recess with plasma generated from a gas containing a source gas supplied into a processing container; applying a pulsed second DC voltage to the mounting table and etching at least a part of the dielectric film formed in the recess with plasma generated from a gas containing an etchant gas supplied into the processing container; and repeating the step of forming the dielectric film and the step of etching at least a part of the dielectric film. The first DC voltage is set to a value for selectively controlling the potential of the substrate during the film formation to a potential for forming the dielectric film into a desired shape. The second DC voltage is set to a value that is a different value from the first DC voltage and for selectively controlling the potential of the substrate during the etching to a potential for forming the dielectric film into the desired shape.SELECTED DRAWING: Figure 4
【課題】凹部内への膜の埋込精度を高める。【解決手段】凹部を有する基板を載置台に準備する工程と、パルス化された第１の直流電圧を載置台に印加し、処理容器内に供給した原料ガスを含むガスから生成したプラズマにより凹部に誘電体膜を形成する工程と、パルス化された第２の直流電圧を載置台に印加し、処理容器内に供給したエッチャントガスを含むガスから生成したプラズマにより凹部に形成された誘電体膜の少なくとも一部をエッチングする工程と、誘電体膜を形成する工程と、誘電体膜の少なくとも一部をエッチングする工程とを繰り返す工程と、を有し、第１の直流電圧は、成膜時の基板の電位を誘電体膜を所望の形状にする電位に選択的に制御する値に設定され、第２の直流電圧は、第１の直流電圧と異なる値であり、エッチング時の基板の電位を誘電体膜を所望の形状にする電位に選択的に制御する値に設定される凹部の埋込方法が提供される。【選択図】図４ |
| format | Patent |
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【課題】凹部内への膜の埋込精度を高める。【解決手段】凹部を有する基板を載置台に準備する工程と、パルス化された第１の直流電圧を載置台に印加し、処理容器内に供給した原料ガスを含むガスから生成したプラズマにより凹部に誘電体膜を形成する工程と、パルス化された第２の直流電圧を載置台に印加し、処理容器内に供給したエッチャントガスを含むガスから生成したプラズマにより凹部に形成された誘電体膜の少なくとも一部をエッチングする工程と、誘電体膜を形成する工程と、誘電体膜の少なくとも一部をエッチングする工程とを繰り返す工程と、を有し、第１の直流電圧は、成膜時の基板の電位を誘電体膜を所望の形状にする電位に選択的に制御する値に設定され、第２の直流電圧は、第１の直流電圧と異なる値であり、エッチング時の基板の電位を誘電体膜を所望の形状にする電位に選択的に制御する値に設定される凹部の埋込方法が提供される。【選択図】図４</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240627&DB=EPODOC&CC=JP&NR=2024085546A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240627&DB=EPODOC&CC=JP&NR=2024085546A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NOGAMI TAKAFUMI</creatorcontrib><creatorcontrib>KOTE KENICHI</creatorcontrib><title>RECESS FILLING METHOD AND PLASMA TREATMENT DEVICE</title><description>To increase the precision in filling films into a recess.SOLUTION: Provided is a recess filling method comprising the steps of: preparing a substrate having a recess on a mounting table; applying a pulsed first DC voltage to the mounting table and forming a dielectric film in the recess with plasma generated from a gas containing a source gas supplied into a processing container; applying a pulsed second DC voltage to the mounting table and etching at least a part of the dielectric film formed in the recess with plasma generated from a gas containing an etchant gas supplied into the processing container; and repeating the step of forming the dielectric film and the step of etching at least a part of the dielectric film. The first DC voltage is set to a value for selectively controlling the potential of the substrate during the film formation to a potential for forming the dielectric film into a desired shape. The second DC voltage is set to a value that is a different value from the first DC voltage and for selectively controlling the potential of the substrate during the etching to a potential for forming the dielectric film into the desired shape.SELECTED DRAWING: Figure 4
【課題】凹部内への膜の埋込精度を高める。【解決手段】凹部を有する基板を載置台に準備する工程と、パルス化された第１の直流電圧を載置台に印加し、処理容器内に供給した原料ガスを含むガスから生成したプラズマにより凹部に誘電体膜を形成する工程と、パルス化された第２の直流電圧を載置台に印加し、処理容器内に供給したエッチャントガスを含むガスから生成したプラズマにより凹部に形成された誘電体膜の少なくとも一部をエッチングする工程と、誘電体膜を形成する工程と、誘電体膜の少なくとも一部をエッチングする工程とを繰り返す工程と、を有し、第１の直流電圧は、成膜時の基板の電位を誘電体膜を所望の形状にする電位に選択的に制御する値に設定され、第２の直流電圧は、第１の直流電圧と異なる値であり、エッチング時の基板の電位を誘電体膜を所望の形状にする電位に選択的に制御する値に設定される凹部の埋込方法が提供される。【選択図】図４</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAMcnV2DQ5WcPP08fH0c1fwdQ3x8HdRcPRzUQjwcQz2dVQICXJ1DPF19QtRcHEN83R25WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgZGJgYWpqYmZo7GRCkCAIkMJtQ</recordid><startdate>20240627</startdate><enddate>20240627</enddate><creator>NOGAMI TAKAFUMI</creator><creator>KOTE KENICHI</creator><scope>EVB</scope></search><sort><creationdate>20240627</creationdate><title>RECESS FILLING METHOD AND PLASMA TREATMENT DEVICE</title><author>NOGAMI TAKAFUMI ; KOTE KENICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2024085546A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NOGAMI TAKAFUMI</creatorcontrib><creatorcontrib>KOTE KENICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NOGAMI TAKAFUMI</au><au>KOTE KENICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RECESS FILLING METHOD AND PLASMA TREATMENT DEVICE</title><date>2024-06-27</date><risdate>2024</risdate><abstract>To increase the precision in filling films into a recess.SOLUTION: Provided is a recess filling method comprising the steps of: preparing a substrate having a recess on a mounting table; applying a pulsed first DC voltage to the mounting table and forming a dielectric film in the recess with plasma generated from a gas containing a source gas supplied into a processing container; applying a pulsed second DC voltage to the mounting table and etching at least a part of the dielectric film formed in the recess with plasma generated from a gas containing an etchant gas supplied into the processing container; and repeating the step of forming the dielectric film and the step of etching at least a part of the dielectric film. The first DC voltage is set to a value for selectively controlling the potential of the substrate during the film formation to a potential for forming the dielectric film into a desired shape. The second DC voltage is set to a value that is a different value from the first DC voltage and for selectively controlling the potential of the substrate during the etching to a potential for forming the dielectric film into the desired shape.SELECTED DRAWING: Figure 4
【課題】凹部内への膜の埋込精度を高める。【解決手段】凹部を有する基板を載置台に準備する工程と、パルス化された第１の直流電圧を載置台に印加し、処理容器内に供給した原料ガスを含むガスから生成したプラズマにより凹部に誘電体膜を形成する工程と、パルス化された第２の直流電圧を載置台に印加し、処理容器内に供給したエッチャントガスを含むガスから生成したプラズマにより凹部に形成された誘電体膜の少なくとも一部をエッチングする工程と、誘電体膜を形成する工程と、誘電体膜の少なくとも一部をエッチングする工程とを繰り返す工程と、を有し、第１の直流電圧は、成膜時の基板の電位を誘電体膜を所望の形状にする電位に選択的に制御する値に設定され、第２の直流電圧は、第１の直流電圧と異なる値であり、エッチング時の基板の電位を誘電体膜を所望の形状にする電位に選択的に制御する値に設定される凹部の埋込方法が提供される。【選択図】図４</abstract><oa>free_for_read</oa></addata></record> |
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| title | RECESS FILLING METHOD AND PLASMA TREATMENT DEVICE |
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