EPITAXIAL GROWTH APPARATUS AND MULTI-LAYER GAS SUPPLY MODULE USED THEREFOR
To provide an epitaxial growth apparatus which forms the uniform gas distribution in the entire region of a large-area substrate to uniformly grow an epitaxial layer and a gas supply module therefor.SOLUTION: An apparatus includes: a reaction chamber; a susceptor 150 positioned in the reaction chamb...
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| creator | KWON HYUN HO CHOI BUM HO LEE SEUNG SU PARK KYUNG SHIN LIM SUK HO JEONG JONG WOOK KIM DONG HYEON |
| description | To provide an epitaxial growth apparatus which forms the uniform gas distribution in the entire region of a large-area substrate to uniformly grow an epitaxial layer and a gas supply module therefor.SOLUTION: An apparatus includes: a reaction chamber; a susceptor 150 positioned in the reaction chamber and configured to seat a wafer W thereon; and a multi-layer gas supply module 200 configured to supply a gas to the reaction chamber to form an epitaxial layer on the wafer, wherein the multi-layer gas supply module includes an injector 210 including ports 211-213 of a plurality of layers, each of which discharges a different gas for each layer, the ports of each layer including a center port 216 corresponding to a central region of the wafer, and a pair of edge ports 217 corresponding to both edge regions of the wafer, and the injector further includes a flow distribution unit configured to distribute gas flows input to the center port and the edge port among the ports of each layer independently from each other.SELECTED DRAWING: Figure 2
【課題】大面積基板の全体領域において均一なガス分布を形成してエピタキシャル層を均一に成長させるエピタキシャル成長装置及びそのガス供給モジュールを提供する。【解決手段】装置は、反応チャンバと反応チャンバ内に位置し、ウエハＷが定着するサセプタ１５０及びウエハにエピタキシャル層を形成するために反応チャンバに対してガスを供給する多層ガス供給モジュール２００を含み、多層ガス供給モジュールのインジェクタ２１０は、層別に異なるガスを吐出する複数層のポート２１１～２１３を備える。複数層のポートの各層のポートは、ウエハの中央領域に対応するセンターポート２１６とウエハの両側の縁部領域に対応する一対のエッジポート２１７とを含み、インジェクタはさらに、各層のポートのうちセンターポートとエッジポートに入力されるガス流量を互いに独立的に配分する流量配分ユニットを含む。【選択図】図２ |
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【課題】大面積基板の全体領域において均一なガス分布を形成してエピタキシャル層を均一に成長させるエピタキシャル成長装置及びそのガス供給モジュールを提供する。【解決手段】装置は、反応チャンバと反応チャンバ内に位置し、ウエハＷが定着するサセプタ１５０及びウエハにエピタキシャル層を形成するために反応チャンバに対してガスを供給する多層ガス供給モジュール２００を含み、多層ガス供給モジュールのインジェクタ２１０は、層別に異なるガスを吐出する複数層のポート２１１～２１３を備える。複数層のポートの各層のポートは、ウエハの中央領域に対応するセンターポート２１６とウエハの両側の縁部領域に対応する一対のエッジポート２１７とを含み、インジェクタはさらに、各層のポートのうちセンターポートとエッジポートに入力されるガス流量を互いに独立的に配分する流量配分ユニットを含む。【選択図】図２</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240617&DB=EPODOC&CC=JP&NR=2024081127A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240617&DB=EPODOC&CC=JP&NR=2024081127A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KWON HYUN HO</creatorcontrib><creatorcontrib>CHOI BUM HO</creatorcontrib><creatorcontrib>LEE SEUNG SU</creatorcontrib><creatorcontrib>PARK KYUNG SHIN</creatorcontrib><creatorcontrib>LIM SUK HO</creatorcontrib><creatorcontrib>JEONG JONG WOOK</creatorcontrib><creatorcontrib>KIM DONG HYEON</creatorcontrib><title>EPITAXIAL GROWTH APPARATUS AND MULTI-LAYER GAS SUPPLY MODULE USED THEREFOR</title><description>To provide an epitaxial growth apparatus which forms the uniform gas distribution in the entire region of a large-area substrate to uniformly grow an epitaxial layer and a gas supply module therefor.SOLUTION: An apparatus includes: a reaction chamber; a susceptor 150 positioned in the reaction chamber and configured to seat a wafer W thereon; and a multi-layer gas supply module 200 configured to supply a gas to the reaction chamber to form an epitaxial layer on the wafer, wherein the multi-layer gas supply module includes an injector 210 including ports 211-213 of a plurality of layers, each of which discharges a different gas for each layer, the ports of each layer including a center port 216 corresponding to a central region of the wafer, and a pair of edge ports 217 corresponding to both edge regions of the wafer, and the injector further includes a flow distribution unit configured to distribute gas flows input to the center port and the edge port among the ports of each layer independently from each other.SELECTED DRAWING: Figure 2
【課題】大面積基板の全体領域において均一なガス分布を形成してエピタキシャル層を均一に成長させるエピタキシャル成長装置及びそのガス供給モジュールを提供する。【解決手段】装置は、反応チャンバと反応チャンバ内に位置し、ウエハＷが定着するサセプタ１５０及びウエハにエピタキシャル層を形成するために反応チャンバに対してガスを供給する多層ガス供給モジュール２００を含み、多層ガス供給モジュールのインジェクタ２１０は、層別に異なるガスを吐出する複数層のポート２１１～２１３を備える。複数層のポートの各層のポートは、ウエハの中央領域に対応するセンターポート２１６とウエハの両側の縁部領域に対応する一対のエッジポート２１７とを含み、インジェクタはさらに、各層のポートのうちセンターポートとエッジポートに入力されるガス流量を互いに独立的に配分する流量配分ユニットを含む。【選択図】図２</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyr0KwjAQAOAsDqK-w-FeaKNg18Ncm5TUHPlBO5UicRIt1PfHxQdw-pZvLTpiE_Fm0ELr3TVqQGb0GFMAvCjok42msDiQhxYDhMRsB-idSpYgBVIQNXlqnN-K1WN6Lnn3cyP2DcWzLvL8HvMyT_f8yp-xY1nKY1lXlTzh4a_0BdrnLg4</recordid><startdate>20240617</startdate><enddate>20240617</enddate><creator>KWON HYUN HO</creator><creator>CHOI BUM HO</creator><creator>LEE SEUNG SU</creator><creator>PARK KYUNG SHIN</creator><creator>LIM SUK HO</creator><creator>JEONG JONG WOOK</creator><creator>KIM DONG HYEON</creator><scope>EVB</scope></search><sort><creationdate>20240617</creationdate><title>EPITAXIAL GROWTH APPARATUS AND MULTI-LAYER GAS SUPPLY MODULE USED THEREFOR</title><author>KWON HYUN HO ; CHOI BUM HO ; LEE SEUNG SU ; PARK KYUNG SHIN ; LIM SUK HO ; JEONG JONG WOOK ; KIM DONG HYEON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2024081127A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>KWON HYUN HO</creatorcontrib><creatorcontrib>CHOI BUM HO</creatorcontrib><creatorcontrib>LEE SEUNG SU</creatorcontrib><creatorcontrib>PARK KYUNG SHIN</creatorcontrib><creatorcontrib>LIM SUK HO</creatorcontrib><creatorcontrib>JEONG JONG WOOK</creatorcontrib><creatorcontrib>KIM DONG HYEON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KWON HYUN HO</au><au>CHOI BUM HO</au><au>LEE SEUNG SU</au><au>PARK KYUNG SHIN</au><au>LIM SUK HO</au><au>JEONG JONG WOOK</au><au>KIM DONG HYEON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>EPITAXIAL GROWTH APPARATUS AND MULTI-LAYER GAS SUPPLY MODULE USED THEREFOR</title><date>2024-06-17</date><risdate>2024</risdate><abstract>To provide an epitaxial growth apparatus which forms the uniform gas distribution in the entire region of a large-area substrate to uniformly grow an epitaxial layer and a gas supply module therefor.SOLUTION: An apparatus includes: a reaction chamber; a susceptor 150 positioned in the reaction chamber and configured to seat a wafer W thereon; and a multi-layer gas supply module 200 configured to supply a gas to the reaction chamber to form an epitaxial layer on the wafer, wherein the multi-layer gas supply module includes an injector 210 including ports 211-213 of a plurality of layers, each of which discharges a different gas for each layer, the ports of each layer including a center port 216 corresponding to a central region of the wafer, and a pair of edge ports 217 corresponding to both edge regions of the wafer, and the injector further includes a flow distribution unit configured to distribute gas flows input to the center port and the edge port among the ports of each layer independently from each other.SELECTED DRAWING: Figure 2
【課題】大面積基板の全体領域において均一なガス分布を形成してエピタキシャル層を均一に成長させるエピタキシャル成長装置及びそのガス供給モジュールを提供する。【解決手段】装置は、反応チャンバと反応チャンバ内に位置し、ウエハＷが定着するサセプタ１５０及びウエハにエピタキシャル層を形成するために反応チャンバに対してガスを供給する多層ガス供給モジュール２００を含み、多層ガス供給モジュールのインジェクタ２１０は、層別に異なるガスを吐出する複数層のポート２１１～２１３を備える。複数層のポートの各層のポートは、ウエハの中央領域に対応するセンターポート２１６とウエハの両側の縁部領域に対応する一対のエッジポート２１７とを含み、インジェクタはさらに、各層のポートのうちセンターポートとエッジポートに入力されるガス流量を互いに独立的に配分する流量配分ユニットを含む。【選択図】図２</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | EPITAXIAL GROWTH APPARATUS AND MULTI-LAYER GAS SUPPLY MODULE USED THEREFOR |
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