MAGNETIC DOMAIN WALL DISPLACEMENT TYPE DEVICE AND METHOD OF MANUFACTURING THE SAME
To provide a method of manufacturing a magnetic domain wall displacement type device that has an array of magnetic domain wall displacement elements having magnetic films excellent in magnetic characteristics although formed of a material low in heat resistance.SOLUTION: The present invention relate...
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| creator | MIYAMOTO YASUYOSHI TAKAHASHI MAO IGUCHI YOSHINORI KATO DAISUKE NAKATANI NAOKI |
| description | To provide a method of manufacturing a magnetic domain wall displacement type device that has an array of magnetic domain wall displacement elements having magnetic films excellent in magnetic characteristics although formed of a material low in heat resistance.SOLUTION: The present invention relates to a method of manufacturing a magnetic domain wall displacement type device that has a magnetic domain wall displacement element arrayed, and the magnetic domain wall displacement element comprises a magnetic thin wire 1 which comprises a magnetic layer 11 and is formed into a thin wire, and electrodes 21, 22 which are connected to both ends of the magnetic thin wire. The method comprises in order; a mask stage of forming a mask on a substrate 71, a region where the magnetic thin wire 1 is formed and a region where a frame body 6 encircling the whole magnetic thin wire 1 in plan view is formed being bored in the mask; a magnetic thin wire material deposition stage of depositing the material of the magnetic thin wire 1 on the substrate 71; a lift-off stage of dissolving away the mask; and a substrate joining stage of sticking the substrate 73, having the electrodes 21, 22 formed thereon, on the substrate 71 at a room temperature so that the electrodes 21, 22 are joined to the magnetic thin wire 1.SELECTED DRAWING: Figure 7
【課題】耐熱性が低い材料であっても磁気特性の良好な磁性膜を備える磁壁移動素子を配列した磁壁移動型デバイスの製造方法を提供する。【解決手段】磁性層１１を備えて細線状に形成してなる磁性細線１と、磁性細線の両端に接続する電極２１，２２と、を備える磁壁移動素子を配列した磁壁移動型デバイスの製造方法であって、基板７１上に、磁性細線１が形成される領域と、平面視ですべての磁性細線１を囲繞する枠体６が形成される領域と、を空けたマスクを形成するマスク工程と、基板７１上に磁性細線１の材料を成膜する磁性細線材料成膜工程と、前記マスクを溶解除去するリフトオフ工程と、常温で、電極２１，２２が形成された基板７３を、電極２１，２２が磁性細線１に接合するように基板７１と貼り合わせる基板接合工程と、を順に実行する。【選択図】図７ |
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【課題】耐熱性が低い材料であっても磁気特性の良好な磁性膜を備える磁壁移動素子を配列した磁壁移動型デバイスの製造方法を提供する。【解決手段】磁性層１１を備えて細線状に形成してなる磁性細線１と、磁性細線の両端に接続する電極２１，２２と、を備える磁壁移動素子を配列した磁壁移動型デバイスの製造方法であって、基板７１上に、磁性細線１が形成される領域と、平面視ですべての磁性細線１を囲繞する枠体６が形成される領域と、を空けたマスクを形成するマスク工程と、基板７１上に磁性細線１の材料を成膜する磁性細線材料成膜工程と、前記マスクを溶解除去するリフトオフ工程と、常温で、電極２１，２２が形成された基板７３を、電極２１，２２が磁性細線１に接合するように基板７１と貼り合わせる基板接合工程と、を順に実行する。【選択図】図７</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240507&DB=EPODOC&CC=JP&NR=2024061529A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240507&DB=EPODOC&CC=JP&NR=2024061529A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIYAMOTO YASUYOSHI</creatorcontrib><creatorcontrib>TAKAHASHI MAO</creatorcontrib><creatorcontrib>IGUCHI YOSHINORI</creatorcontrib><creatorcontrib>KATO DAISUKE</creatorcontrib><creatorcontrib>NAKATANI NAOKI</creatorcontrib><title>MAGNETIC DOMAIN WALL DISPLACEMENT TYPE DEVICE AND METHOD OF MANUFACTURING THE SAME</title><description>To provide a method of manufacturing a magnetic domain wall displacement type device that has an array of magnetic domain wall displacement elements having magnetic films excellent in magnetic characteristics although formed of a material low in heat resistance.SOLUTION: The present invention relates to a method of manufacturing a magnetic domain wall displacement type device that has a magnetic domain wall displacement element arrayed, and the magnetic domain wall displacement element comprises a magnetic thin wire 1 which comprises a magnetic layer 11 and is formed into a thin wire, and electrodes 21, 22 which are connected to both ends of the magnetic thin wire. The method comprises in order; a mask stage of forming a mask on a substrate 71, a region where the magnetic thin wire 1 is formed and a region where a frame body 6 encircling the whole magnetic thin wire 1 in plan view is formed being bored in the mask; a magnetic thin wire material deposition stage of depositing the material of the magnetic thin wire 1 on the substrate 71; a lift-off stage of dissolving away the mask; and a substrate joining stage of sticking the substrate 73, having the electrodes 21, 22 formed thereon, on the substrate 71 at a room temperature so that the electrodes 21, 22 are joined to the magnetic thin wire 1.SELECTED DRAWING: Figure 7
【課題】耐熱性が低い材料であっても磁気特性の良好な磁性膜を備える磁壁移動素子を配列した磁壁移動型デバイスの製造方法を提供する。【解決手段】磁性層１１を備えて細線状に形成してなる磁性細線１と、磁性細線の両端に接続する電極２１，２２と、を備える磁壁移動素子を配列した磁壁移動型デバイスの製造方法であって、基板７１上に、磁性細線１が形成される領域と、平面視ですべての磁性細線１を囲繞する枠体６が形成される領域と、を空けたマスクを形成するマスク工程と、基板７１上に磁性細線１の材料を成膜する磁性細線材料成膜工程と、前記マスクを溶解除去するリフトオフ工程と、常温で、電極２１，２２が形成された基板７３を、電極２１，２２が磁性細線１に接合するように基板７１と貼り合わせる基板接合工程と、を順に実行する。【選択図】図７</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FREQUENCY-CHANGING</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrsKwjAUANAsDqL-w8VdqPEBjpfkponkRXurOJUicRIt1P_HxQ9wOsuZiyZgHYmdAp0CughX9B60a7NHRYEiA98ygaaLUwQYNQRimzQkAwFjZ1Bx17hYA1uCFgMtxewxPKey-rkQa0Os7KaM775M43Avr_Lpz1lWcl8dtwd5wt1f6QsBeS-q</recordid><startdate>20240507</startdate><enddate>20240507</enddate><creator>MIYAMOTO YASUYOSHI</creator><creator>TAKAHASHI MAO</creator><creator>IGUCHI YOSHINORI</creator><creator>KATO DAISUKE</creator><creator>NAKATANI NAOKI</creator><scope>EVB</scope></search><sort><creationdate>20240507</creationdate><title>MAGNETIC DOMAIN WALL DISPLACEMENT TYPE DEVICE AND METHOD OF MANUFACTURING THE SAME</title><author>MIYAMOTO YASUYOSHI ; TAKAHASHI MAO ; IGUCHI YOSHINORI ; KATO DAISUKE ; NAKATANI NAOKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2024061529A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FREQUENCY-CHANGING</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><toplevel>online_resources</toplevel><creatorcontrib>MIYAMOTO YASUYOSHI</creatorcontrib><creatorcontrib>TAKAHASHI MAO</creatorcontrib><creatorcontrib>IGUCHI YOSHINORI</creatorcontrib><creatorcontrib>KATO DAISUKE</creatorcontrib><creatorcontrib>NAKATANI NAOKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIYAMOTO YASUYOSHI</au><au>TAKAHASHI MAO</au><au>IGUCHI YOSHINORI</au><au>KATO DAISUKE</au><au>NAKATANI NAOKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MAGNETIC DOMAIN WALL DISPLACEMENT TYPE DEVICE AND METHOD OF MANUFACTURING THE SAME</title><date>2024-05-07</date><risdate>2024</risdate><abstract>To provide a method of manufacturing a magnetic domain wall displacement type device that has an array of magnetic domain wall displacement elements having magnetic films excellent in magnetic characteristics although formed of a material low in heat resistance.SOLUTION: The present invention relates to a method of manufacturing a magnetic domain wall displacement type device that has a magnetic domain wall displacement element arrayed, and the magnetic domain wall displacement element comprises a magnetic thin wire 1 which comprises a magnetic layer 11 and is formed into a thin wire, and electrodes 21, 22 which are connected to both ends of the magnetic thin wire. The method comprises in order; a mask stage of forming a mask on a substrate 71, a region where the magnetic thin wire 1 is formed and a region where a frame body 6 encircling the whole magnetic thin wire 1 in plan view is formed being bored in the mask; a magnetic thin wire material deposition stage of depositing the material of the magnetic thin wire 1 on the substrate 71; a lift-off stage of dissolving away the mask; and a substrate joining stage of sticking the substrate 73, having the electrodes 21, 22 formed thereon, on the substrate 71 at a room temperature so that the electrodes 21, 22 are joined to the magnetic thin wire 1.SELECTED DRAWING: Figure 7
【課題】耐熱性が低い材料であっても磁気特性の良好な磁性膜を備える磁壁移動素子を配列した磁壁移動型デバイスの製造方法を提供する。【解決手段】磁性層１１を備えて細線状に形成してなる磁性細線１と、磁性細線の両端に接続する電極２１，２２と、を備える磁壁移動素子を配列した磁壁移動型デバイスの製造方法であって、基板７１上に、磁性細線１が形成される領域と、平面視ですべての磁性細線１を囲繞する枠体６が形成される領域と、を空けたマスクを形成するマスク工程と、基板７１上に磁性細線１の材料を成膜する磁性細線材料成膜工程と、前記マスクを溶解除去するリフトオフ工程と、常温で、電極２１，２２が形成された基板７３を、電極２１，２２が磁性細線１に接合するように基板７１と貼り合わせる基板接合工程と、を順に実行する。【選択図】図７</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | MAGNETIC DOMAIN WALL DISPLACEMENT TYPE DEVICE AND METHOD OF MANUFACTURING THE SAME |
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