SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT
To provide a semiconductor light-emitting element in which the resistance increase of a p+ GAN layer containing Mg at high concentration can be prevented and the driving voltage is reduced.SOLUTION: In a semiconductor light-emitting element 100 on a GaN substrate 110, on a first n-type GaN layer 131...
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| creator | SUEMOTO YUYA KAMIYAMA SATOSHI KAMIOKA YOSHIHIRO TAKEUCHI TETSUYA IWATANI MOTOAKI MESHIDA MASAMI JINNO YUKIMI IIHAMA JUNYA KUSUNOSE YOSHIRO |
| description | To provide a semiconductor light-emitting element in which the resistance increase of a p+ GAN layer containing Mg at high concentration can be prevented and the driving voltage is reduced.SOLUTION: In a semiconductor light-emitting element 100 on a GaN substrate 110, on a first n-type GaN layer 131 with a nanowire structure, a light-emitting layer 132, a p-type GaN layer 133, a tunnel junction layer 134, and a second n-type GaN layer 140 are stacked in this order. The first n-type GaN layer includes a Si-containing GaN layer. The light-emitting layer includes a layer with an InGaN layer and a GaN layer. The p-type GaN layer includes a Mg-containing GaN layer. The tunnel junction layer includes a multilayer body in which an n+-type GaN layer 136 is stacked on a p+-type GaN layer 135. The n+-type GaN layer is an n+-type GaN sputtering film and the second n-type GaN layer includes a Si-containing GaN layer.SELECTED DRAWING: Figure 3
【課題】Ｍｇを高濃度に含む該ｐ＋ＧａＮ層の高抵抗化を防止でき、駆動電圧が低減された半導体発光素子を提供する。【解決手段】ＧａＮ基板１１０上の半導体発光素子１００であって、ナノワイヤ構造の第１のｎ型ＧａＮ層１３１上に、発光層１３２、ｐ型ＧａＮ層１３３、トンネル接合層１３４、及び第２のｎ型ＧａＮ層１４０が、この順で積層しており、第１のｎ型ＧａＮ層は、Ｓｉ含有ＧａＮ層からなり、発光層は、ＩｎＧａＮ層とＧａＮ層とを有する層からなり、ｐ型ＧａＮ層は、Ｍｇ含有ＧａＮ層からなり、トンネル接合層は、ｐ＋型ＧａＮ層１３５上にｎ＋型ＧａＮ層１３６が積層した積層体からなり、ｎ＋型ＧａＮ層は、ｎ＋型ＧａＮスパッタ膜であり、第２のｎ型ＧａＮ層は、Ｓｉ含有ＧａＮ層からなる、半導体発光素子である。【選択図】図３ |
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【課題】Ｍｇを高濃度に含む該ｐ＋ＧａＮ層の高抵抗化を防止でき、駆動電圧が低減された半導体発光素子を提供する。【解決手段】ＧａＮ基板１１０上の半導体発光素子１００であって、ナノワイヤ構造の第１のｎ型ＧａＮ層１３１上に、発光層１３２、ｐ型ＧａＮ層１３３、トンネル接合層１３４、及び第２のｎ型ＧａＮ層１４０が、この順で積層しており、第１のｎ型ＧａＮ層は、Ｓｉ含有ＧａＮ層からなり、発光層は、ＩｎＧａＮ層とＧａＮ層とを有する層からなり、ｐ型ＧａＮ層は、Ｍｇ含有ＧａＮ層からなり、トンネル接合層は、ｐ＋型ＧａＮ層１３５上にｎ＋型ＧａＮ層１３６が積層した積層体からなり、ｎ＋型ＧａＮ層は、ｎ＋型ＧａＮスパッタ膜であり、第２のｎ型ＧａＮ層は、Ｓｉ含有ＧａＮ層からなる、半導体発光素子である。【選択図】図３</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240402&DB=EPODOC&CC=JP&NR=2024043805A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240402&DB=EPODOC&CC=JP&NR=2024043805A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SUEMOTO YUYA</creatorcontrib><creatorcontrib>KAMIYAMA SATOSHI</creatorcontrib><creatorcontrib>KAMIOKA YOSHIHIRO</creatorcontrib><creatorcontrib>TAKEUCHI TETSUYA</creatorcontrib><creatorcontrib>IWATANI MOTOAKI</creatorcontrib><creatorcontrib>MESHIDA MASAMI</creatorcontrib><creatorcontrib>JINNO YUKIMI</creatorcontrib><creatorcontrib>IIHAMA JUNYA</creatorcontrib><creatorcontrib>KUSUNOSE YOSHIRO</creatorcontrib><title>SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT</title><description>To provide a semiconductor light-emitting element in which the resistance increase of a p+ GAN layer containing Mg at high concentration can be prevented and the driving voltage is reduced.SOLUTION: In a semiconductor light-emitting element 100 on a GaN substrate 110, on a first n-type GaN layer 131 with a nanowire structure, a light-emitting layer 132, a p-type GaN layer 133, a tunnel junction layer 134, and a second n-type GaN layer 140 are stacked in this order. The first n-type GaN layer includes a Si-containing GaN layer. The light-emitting layer includes a layer with an InGaN layer and a GaN layer. The p-type GaN layer includes a Mg-containing GaN layer. The tunnel junction layer includes a multilayer body in which an n+-type GaN layer 136 is stacked on a p+-type GaN layer 135. The n+-type GaN layer is an n+-type GaN sputtering film and the second n-type GaN layer includes a Si-containing GaN layer.SELECTED DRAWING: Figure 3
【課題】Ｍｇを高濃度に含む該ｐ＋ＧａＮ層の高抵抗化を防止でき、駆動電圧が低減された半導体発光素子を提供する。【解決手段】ＧａＮ基板１１０上の半導体発光素子１００であって、ナノワイヤ構造の第１のｎ型ＧａＮ層１３１上に、発光層１３２、ｐ型ＧａＮ層１３３、トンネル接合層１３４、及び第２のｎ型ＧａＮ層１４０が、この順で積層しており、第１のｎ型ＧａＮ層は、Ｓｉ含有ＧａＮ層からなり、発光層は、ＩｎＧａＮ層とＧａＮ層とを有する層からなり、ｐ型ＧａＮ層は、Ｍｇ含有ＧａＮ層からなり、トンネル接合層は、ｐ＋型ＧａＮ層１３５上にｎ＋型ＧａＮ層１３６が積層した積層体からなり、ｎ＋型ＧａＮ層は、ｎ＋型ＧａＮスパッタ膜であり、第２のｎ型ＧａＮ層は、Ｓｉ含有ＧａＮ層からなる、半導体発光素子である。【選択図】図３</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEgLdvX1dPb3cwl1DvEPUvDxdPcI0QUKhYR4-rkruPq4-rr6hSg4-rko-Dr6hbo5OoeEBoFkfF1DPPxdFNyAeogxgYeBNS0xpziVF0pzMyi5uYY4e-imFuTHpxYXJCan5qWWxHsFGBkYmRiYGFsYmDoaE6UIAG9ZNgY</recordid><startdate>20240402</startdate><enddate>20240402</enddate><creator>SUEMOTO YUYA</creator><creator>KAMIYAMA SATOSHI</creator><creator>KAMIOKA YOSHIHIRO</creator><creator>TAKEUCHI TETSUYA</creator><creator>IWATANI MOTOAKI</creator><creator>MESHIDA MASAMI</creator><creator>JINNO YUKIMI</creator><creator>IIHAMA JUNYA</creator><creator>KUSUNOSE YOSHIRO</creator><scope>EVB</scope></search><sort><creationdate>20240402</creationdate><title>SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT</title><author>SUEMOTO YUYA ; KAMIYAMA SATOSHI ; KAMIOKA YOSHIHIRO ; TAKEUCHI TETSUYA ; IWATANI MOTOAKI ; MESHIDA MASAMI ; JINNO YUKIMI ; IIHAMA JUNYA ; KUSUNOSE YOSHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2024043805A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SUEMOTO YUYA</creatorcontrib><creatorcontrib>KAMIYAMA SATOSHI</creatorcontrib><creatorcontrib>KAMIOKA YOSHIHIRO</creatorcontrib><creatorcontrib>TAKEUCHI TETSUYA</creatorcontrib><creatorcontrib>IWATANI MOTOAKI</creatorcontrib><creatorcontrib>MESHIDA MASAMI</creatorcontrib><creatorcontrib>JINNO YUKIMI</creatorcontrib><creatorcontrib>IIHAMA JUNYA</creatorcontrib><creatorcontrib>KUSUNOSE YOSHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SUEMOTO YUYA</au><au>KAMIYAMA SATOSHI</au><au>KAMIOKA YOSHIHIRO</au><au>TAKEUCHI TETSUYA</au><au>IWATANI MOTOAKI</au><au>MESHIDA MASAMI</au><au>JINNO YUKIMI</au><au>IIHAMA JUNYA</au><au>KUSUNOSE YOSHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT</title><date>2024-04-02</date><risdate>2024</risdate><abstract>To provide a semiconductor light-emitting element in which the resistance increase of a p+ GAN layer containing Mg at high concentration can be prevented and the driving voltage is reduced.SOLUTION: In a semiconductor light-emitting element 100 on a GaN substrate 110, on a first n-type GaN layer 131 with a nanowire structure, a light-emitting layer 132, a p-type GaN layer 133, a tunnel junction layer 134, and a second n-type GaN layer 140 are stacked in this order. The first n-type GaN layer includes a Si-containing GaN layer. The light-emitting layer includes a layer with an InGaN layer and a GaN layer. The p-type GaN layer includes a Mg-containing GaN layer. The tunnel junction layer includes a multilayer body in which an n+-type GaN layer 136 is stacked on a p+-type GaN layer 135. The n+-type GaN layer is an n+-type GaN sputtering film and the second n-type GaN layer includes a Si-containing GaN layer.SELECTED DRAWING: Figure 3
【課題】Ｍｇを高濃度に含む該ｐ＋ＧａＮ層の高抵抗化を防止でき、駆動電圧が低減された半導体発光素子を提供する。【解決手段】ＧａＮ基板１１０上の半導体発光素子１００であって、ナノワイヤ構造の第１のｎ型ＧａＮ層１３１上に、発光層１３２、ｐ型ＧａＮ層１３３、トンネル接合層１３４、及び第２のｎ型ＧａＮ層１４０が、この順で積層しており、第１のｎ型ＧａＮ層は、Ｓｉ含有ＧａＮ層からなり、発光層は、ＩｎＧａＮ層とＧａＮ層とを有する層からなり、ｐ型ＧａＮ層は、Ｍｇ含有ＧａＮ層からなり、トンネル接合層は、ｐ＋型ＧａＮ層１３５上にｎ＋型ＧａＮ層１３６が積層した積層体からなり、ｎ＋型ＧａＮ層は、ｎ＋型ＧａＮスパッタ膜であり、第２のｎ型ＧａＮ層は、Ｓｉ含有ＧａＮ層からなる、半導体発光素子である。【選択図】図３</abstract><oa>free_for_read</oa></addata></record> |
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| title | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
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