LIGHT DETECTION DEVICE

To suppress flare caused by light that is incident further to an outer peripheral side than a pixel region.SOLUTION: A light detection device comprises a semiconductor substrate having a pixel region in which a plurality of pixels for performing photoelectric conversion are arranged. The semiconduct...

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Bibliographische Detailangaben
Hauptverfasser: IWABUCHI TOSHIAKI, SATO KEISUKE
Format: Patent
Sprache:eng ; jpn
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Beschreibung
Zusammenfassung:To suppress flare caused by light that is incident further to an outer peripheral side than a pixel region.SOLUTION: A light detection device comprises a semiconductor substrate having a pixel region in which a plurality of pixels for performing photoelectric conversion are arranged. The semiconductor substrate comprises: a groove part that is arranged further to an outer peripheral side than the pixel region, has a height lower than that of the pixel region, and extends along a plurality of sides; a protruding part that is arranged further to an outer peripheral side than the groove part, has a height taller than that of the groove part, and extends along the plurality of sides; and a coating film that covers an entire surface area on a light-incident surface side of the protruding part of at least one of the plurality of sides.SELECTED DRAWING: Figure 1 【課題】画素領域よりも外周側に入射された光を起因とするフレアを抑制する。【解決手段】光検出装置は、光電変換を行う複数の画素が配置された画素領域を有する半導体基板を備える。前記半導体基板は、前記画素領域よりも外周側に配置され、前記画素領域よりも低い高さを有するとともに複数の辺に沿って延びる溝部と、前記溝部よりも外周側に配置され、前記溝部よりも高い高さを有するとともに前記複数の辺に沿って延びる凸部と、前記複数の辺のうち、少なくとも一つの辺における前記凸部の光入射面側の表面の全域を覆う被覆膜と、を有する。【選択図】図1