SUBSTRATE PROCESSING APPARATUS
To provide a substrate processing apparatus employing plasma.SOLUTION: A substrate processing apparatus comprises: a chamber having a processing space therein; a dielectric window arranged at an upper portion of the chamber and configured to cover an upper surface of the chamber; and an RF source di...
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| creator | JO HYUNWOO SHIN JAEWON PARK JONGWON LEE SANGJEONG BONG YOUNGUN KANG HANLIM CHOI YOONSEOK JANG KYUNGHUN |
| description | To provide a substrate processing apparatus employing plasma.SOLUTION: A substrate processing apparatus comprises: a chamber having a processing space therein; a dielectric window arranged at an upper portion of the chamber and configured to cover an upper surface of the chamber; and an RF source disposed on the dielectric window and configured to supply RF power to generate plasma from gas in the processing space. The RF source comprises an RF electrode disposed on the dielectric window, and an RF plate disposed on the RF electrode. The dielectric window comprises a groove extending vertically downward from an uppermost surface of the dielectric window. The RF plate has a ring shape.SELECTED DRAWING: Figure 1
【課題】プラズマを用いた基板処理装置を提供する。【解決手段】本発明の基板処理装置は、内部に処理空間を有するチャンバ；チャンバの上部に配置され、チャンバの上面を覆うように構成された誘電体ウィンドウ；及び誘電体ウィンドウ上に配置され、ＲＦパワーを供給し、処理空間のガスからプラズマを発生させるように構成されたＲＦソース；を含み、ＲＦソースは、誘電体ウィンドウ上に配置されるＲＦ電極及びＲＦ電極上に配置されるＲＦプレートを含み、誘電体ウィンドウは、誘電体ウィンドウの最上面から垂直下方に延びた溝を含み、ＲＦプレートは、リング状である。【選択図】図１ |
| format | Patent |
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【課題】プラズマを用いた基板処理装置を提供する。【解決手段】本発明の基板処理装置は、内部に処理空間を有するチャンバ；チャンバの上部に配置され、チャンバの上面を覆うように構成された誘電体ウィンドウ；及び誘電体ウィンドウ上に配置され、ＲＦパワーを供給し、処理空間のガスからプラズマを発生させるように構成されたＲＦソース；を含み、ＲＦソースは、誘電体ウィンドウ上に配置されるＲＦ電極及びＲＦ電極上に配置されるＲＦプレートを含み、誘電体ウィンドウは、誘電体ウィンドウの最上面から垂直下方に延びた溝を含み、ＲＦプレートは、リング状である。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231124&DB=EPODOC&CC=JP&NR=2023168227A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231124&DB=EPODOC&CC=JP&NR=2023168227A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JO HYUNWOO</creatorcontrib><creatorcontrib>SHIN JAEWON</creatorcontrib><creatorcontrib>PARK JONGWON</creatorcontrib><creatorcontrib>LEE SANGJEONG</creatorcontrib><creatorcontrib>BONG YOUNGUN</creatorcontrib><creatorcontrib>KANG HANLIM</creatorcontrib><creatorcontrib>CHOI YOONSEOK</creatorcontrib><creatorcontrib>JANG KYUNGHUN</creatorcontrib><title>SUBSTRATE PROCESSING APPARATUS</title><description>To provide a substrate processing apparatus employing plasma.SOLUTION: A substrate processing apparatus comprises: a chamber having a processing space therein; a dielectric window arranged at an upper portion of the chamber and configured to cover an upper surface of the chamber; and an RF source disposed on the dielectric window and configured to supply RF power to generate plasma from gas in the processing space. The RF source comprises an RF electrode disposed on the dielectric window, and an RF plate disposed on the RF electrode. The dielectric window comprises a groove extending vertically downward from an uppermost surface of the dielectric window. The RF plate has a ring shape.SELECTED DRAWING: Figure 1
【課題】プラズマを用いた基板処理装置を提供する。【解決手段】本発明の基板処理装置は、内部に処理空間を有するチャンバ；チャンバの上部に配置され、チャンバの上面を覆うように構成された誘電体ウィンドウ；及び誘電体ウィンドウ上に配置され、ＲＦパワーを供給し、処理空間のガスからプラズマを発生させるように構成されたＲＦソース；を含み、ＲＦソースは、誘電体ウィンドウ上に配置されるＲＦ電極及びＲＦ電極上に配置されるＲＦプレートを含み、誘電体ウィンドウは、誘電体ウィンドウの最上面から垂直下方に延びた溝を含み、ＲＦプレートは、リング状である。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJALDnUKDglyDHFVCAjyd3YNDvb0c1dwDAhwBIqFBvMwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknivACMDI2NDMwsjI3NHY6IUAQAaayIm</recordid><startdate>20231124</startdate><enddate>20231124</enddate><creator>JO HYUNWOO</creator><creator>SHIN JAEWON</creator><creator>PARK JONGWON</creator><creator>LEE SANGJEONG</creator><creator>BONG YOUNGUN</creator><creator>KANG HANLIM</creator><creator>CHOI YOONSEOK</creator><creator>JANG KYUNGHUN</creator><scope>EVB</scope></search><sort><creationdate>20231124</creationdate><title>SUBSTRATE PROCESSING APPARATUS</title><author>JO HYUNWOO ; SHIN JAEWON ; PARK JONGWON ; LEE SANGJEONG ; BONG YOUNGUN ; KANG HANLIM ; CHOI YOONSEOK ; JANG KYUNGHUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023168227A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JO HYUNWOO</creatorcontrib><creatorcontrib>SHIN JAEWON</creatorcontrib><creatorcontrib>PARK JONGWON</creatorcontrib><creatorcontrib>LEE SANGJEONG</creatorcontrib><creatorcontrib>BONG YOUNGUN</creatorcontrib><creatorcontrib>KANG HANLIM</creatorcontrib><creatorcontrib>CHOI YOONSEOK</creatorcontrib><creatorcontrib>JANG KYUNGHUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JO HYUNWOO</au><au>SHIN JAEWON</au><au>PARK JONGWON</au><au>LEE SANGJEONG</au><au>BONG YOUNGUN</au><au>KANG HANLIM</au><au>CHOI YOONSEOK</au><au>JANG KYUNGHUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING APPARATUS</title><date>2023-11-24</date><risdate>2023</risdate><abstract>To provide a substrate processing apparatus employing plasma.SOLUTION: A substrate processing apparatus comprises: a chamber having a processing space therein; a dielectric window arranged at an upper portion of the chamber and configured to cover an upper surface of the chamber; and an RF source disposed on the dielectric window and configured to supply RF power to generate plasma from gas in the processing space. The RF source comprises an RF electrode disposed on the dielectric window, and an RF plate disposed on the RF electrode. The dielectric window comprises a groove extending vertically downward from an uppermost surface of the dielectric window. The RF plate has a ring shape.SELECTED DRAWING: Figure 1
【課題】プラズマを用いた基板処理装置を提供する。【解決手段】本発明の基板処理装置は、内部に処理空間を有するチャンバ；チャンバの上部に配置され、チャンバの上面を覆うように構成された誘電体ウィンドウ；及び誘電体ウィンドウ上に配置され、ＲＦパワーを供給し、処理空間のガスからプラズマを発生させるように構成されたＲＦソース；を含み、ＲＦソースは、誘電体ウィンドウ上に配置されるＲＦ電極及びＲＦ電極上に配置されるＲＦプレートを含み、誘電体ウィンドウは、誘電体ウィンドウの最上面から垂直下方に延びた溝を含み、ＲＦプレートは、リング状である。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES |
| title | SUBSTRATE PROCESSING APPARATUS |
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