SILSESQUIOXANE WITH CAGE STRUCTURE AND RESIST COMPOSITION

To provide a resist composition including a silsesquioxane with a cage structure, which exhibits superior dry etching resistance and can form a fine pattern when short-wavelength light sources, such as electron beams and extreme ultraviolet light (EUV), are used.SOLUTION: The present invention provi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ONO FUMI, MURATA SHOTA, MURATA TAKAO, MORI HIDEHARU
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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