SILSESQUIOXANE WITH CAGE STRUCTURE AND RESIST COMPOSITION
To provide a resist composition including a silsesquioxane with a cage structure, which exhibits superior dry etching resistance and can form a fine pattern when short-wavelength light sources, such as electron beams and extreme ultraviolet light (EUV), are used.SOLUTION: The present invention provi...
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| creator | ONO FUMI MURATA SHOTA MURATA TAKAO MORI HIDEHARU |
| description | To provide a resist composition including a silsesquioxane with a cage structure, which exhibits superior dry etching resistance and can form a fine pattern when short-wavelength light sources, such as electron beams and extreme ultraviolet light (EUV), are used.SOLUTION: The present invention provides a silsesquioxane with a cage structure represented by the following formula 1: (RmSiO1.5)m. In the formula, Rm represents a hydrocarbon group and m is an integer of 3-30. Rm includes Ra or different structures of Ra and Rb, where Ra has an acid-dissociable group, and Rb has a group that absorbs at least one of extreme ultraviolet rays and electron beams to produce secondary electrons.SELECTED DRAWING: None
【課題】本発明のかご構造を有するシルセスキオキサンを含むレジスト組成物は、電子線や極端紫外光（ＥＵＶ）等の短波長の光源を使用した場合に、ドライエッチング耐性に優れ、微細なパターンを形成することができる。【解決手段】下記式1で表されるかご構造を有するシルセスキオキサン。（ＲｍＳｉＯ1.5）ｍ ・・・１式中、Ｒｍは炭化水素基を示し、ｍは３～３０の整数。ＲｍはＲａ又は、構造の異なるＲａ、Ｒｂを含み、Ｒａは酸脱離性基を有し、Ｒｂは極端紫外線及び電子線の少なくとも一方を吸収して２次電子を発生する基を有する。【選択図】なし |
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【課題】本発明のかご構造を有するシルセスキオキサンを含むレジスト組成物は、電子線や極端紫外光（ＥＵＶ）等の短波長の光源を使用した場合に、ドライエッチング耐性に優れ、微細なパターンを形成することができる。【解決手段】下記式1で表されるかご構造を有するシルセスキオキサン。（ＲｍＳｉＯ1.5）ｍ ・・・１式中、Ｒｍは炭化水素基を示し、ｍは３～３０の整数。ＲｍはＲａ又は、構造の異なるＲａ、Ｒｂを含み、Ｒａは酸脱離性基を有し、Ｒｂは極端紫外線及び電子線の少なくとも一方を吸収して２次電子を発生する基を有する。【選択図】なし</description><language>eng ; jpn</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231121&DB=EPODOC&CC=JP&NR=2023166174A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231121&DB=EPODOC&CC=JP&NR=2023166174A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ONO FUMI</creatorcontrib><creatorcontrib>MURATA SHOTA</creatorcontrib><creatorcontrib>MURATA TAKAO</creatorcontrib><creatorcontrib>MORI HIDEHARU</creatorcontrib><title>SILSESQUIOXANE WITH CAGE STRUCTURE AND RESIST COMPOSITION</title><description>To provide a resist composition including a silsesquioxane with a cage structure, which exhibits superior dry etching resistance and can form a fine pattern when short-wavelength light sources, such as electron beams and extreme ultraviolet light (EUV), are used.SOLUTION: The present invention provides a silsesquioxane with a cage structure represented by the following formula 1: (RmSiO1.5)m. In the formula, Rm represents a hydrocarbon group and m is an integer of 3-30. Rm includes Ra or different structures of Ra and Rb, where Ra has an acid-dissociable group, and Rb has a group that absorbs at least one of extreme ultraviolet rays and electron beams to produce secondary electrons.SELECTED DRAWING: None
【課題】本発明のかご構造を有するシルセスキオキサンを含むレジスト組成物は、電子線や極端紫外光（ＥＵＶ）等の短波長の光源を使用した場合に、ドライエッチング耐性に優れ、微細なパターンを形成することができる。【解決手段】下記式1で表されるかご構造を有するシルセスキオキサン。（ＲｍＳｉＯ1.5）ｍ ・・・１式中、Ｒｍは炭化水素基を示し、ｍは３～３０の整数。ＲｍはＲａ又は、構造の異なるＲａ、Ｒｂを含み、Ｒａは酸脱離性基を有し、Ｒｂは極端紫外線及び電子線の少なくとも一方を吸収して２次電子を発生する基を有する。【選択図】なし</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAM9vQJdg0ODPX0j3D0c1UI9wzxUHB2dHdVCA4JCnUOCQ1yVXD0c1EIcg32DA5RcPb3DfAP9gzx9PfjYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBkbGhmZmhuYmjsZEKQIAGLMprw</recordid><startdate>20231121</startdate><enddate>20231121</enddate><creator>ONO FUMI</creator><creator>MURATA SHOTA</creator><creator>MURATA TAKAO</creator><creator>MORI HIDEHARU</creator><scope>EVB</scope></search><sort><creationdate>20231121</creationdate><title>SILSESQUIOXANE WITH CAGE STRUCTURE AND RESIST COMPOSITION</title><author>ONO FUMI ; MURATA SHOTA ; MURATA TAKAO ; MORI HIDEHARU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023166174A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>ONO FUMI</creatorcontrib><creatorcontrib>MURATA SHOTA</creatorcontrib><creatorcontrib>MURATA TAKAO</creatorcontrib><creatorcontrib>MORI HIDEHARU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ONO FUMI</au><au>MURATA SHOTA</au><au>MURATA TAKAO</au><au>MORI HIDEHARU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SILSESQUIOXANE WITH CAGE STRUCTURE AND RESIST COMPOSITION</title><date>2023-11-21</date><risdate>2023</risdate><abstract>To provide a resist composition including a silsesquioxane with a cage structure, which exhibits superior dry etching resistance and can form a fine pattern when short-wavelength light sources, such as electron beams and extreme ultraviolet light (EUV), are used.SOLUTION: The present invention provides a silsesquioxane with a cage structure represented by the following formula 1: (RmSiO1.5)m. In the formula, Rm represents a hydrocarbon group and m is an integer of 3-30. Rm includes Ra or different structures of Ra and Rb, where Ra has an acid-dissociable group, and Rb has a group that absorbs at least one of extreme ultraviolet rays and electron beams to produce secondary electrons.SELECTED DRAWING: None
【課題】本発明のかご構造を有するシルセスキオキサンを含むレジスト組成物は、電子線や極端紫外光（ＥＵＶ）等の短波長の光源を使用した場合に、ドライエッチング耐性に優れ、微細なパターンを形成することができる。【解決手段】下記式1で表されるかご構造を有するシルセスキオキサン。（ＲｍＳｉＯ1.5）ｍ ・・・１式中、Ｒｍは炭化水素基を示し、ｍは３～３０の整数。ＲｍはＲａ又は、構造の異なるＲａ、Ｒｂを含み、Ｒａは酸脱離性基を有し、Ｒｂは極端紫外線及び電子線の少なくとも一方を吸収して２次電子を発生する基を有する。【選択図】なし</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | SILSESQUIOXANE WITH CAGE STRUCTURE AND RESIST COMPOSITION |
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