MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
To obtain a semiconductor device that eliminates the influence of burrs and contamination generated during metal bonding on a component mounting surface and realizes cooling of a power semiconductor in a small size and at low cost.SOLUTION: A semiconductor device includes a power semiconductor, a he...
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Format: | Patent |
Sprache: | eng ; jpn |
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Zusammenfassung: | To obtain a semiconductor device that eliminates the influence of burrs and contamination generated during metal bonding on a component mounting surface and realizes cooling of a power semiconductor in a small size and at low cost.SOLUTION: A semiconductor device includes a power semiconductor, a heat sink having a first surface provided with the power semiconductor and a second surface provided with a heat dissipation portion, and a metal case in which the power semiconductor and the heat sink are housed, and the heat sink is metal-bonded to the case by penetrating the case.SELECTED DRAWING: Figure 4
【課題】金属接合時に発生するバリ、コンタミによる部品実装面への影響を無くし、パワー半導体の冷却を小型、低コストで実現する半導体装置を得ること。【解決手段】パワー半導体と、前記パワー半導体が設けられた第一の面と放熱部が設けられた第二の面を有するヒートシンクと、前記パワー半導体と前記ヒートシンクが格納された金属のケースと、を備え、前記ケースを貫通して、前記ケースと前記ヒートシンクが金属接合されるようにした。【選択図】 図4 |
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