RUTHENIUM COMPLEX, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING RUTHENIUM-CONTAINING THIN FILM
To provide a ruthenium complex which is useful for production of a ruthenium-containing thin film under low temperature conditions in which an oxidizing gas is not used.SOLUTION: The present invention provides a ruthenium complex represented by general formula (1). (In the formula, each of R1 and R2...
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| creator | OIKE HIROYUKI YAMAMOTO ARINORI EBIHARA RYOSUKE IKEMURA SHUYA FURUHASHI NAOTO |
| description | To provide a ruthenium complex which is useful for production of a ruthenium-containing thin film under low temperature conditions in which an oxidizing gas is not used.SOLUTION: The present invention provides a ruthenium complex represented by general formula (1). (In the formula, each of R1 and R2 independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; each of R3 and R4 represents a hydrogen atom or combined together to form an alkylene group having 1 to 4 carbon atoms; and each of R5, R6 and R7 independently represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group or an allyl group.)SELECTED DRAWING: Figure 1
【課題】酸化性ガスを用いない低温条件下でルテニウム含有薄膜を作製するのに有用なルテニウム錯体を提供する。【解決手段】一般式（１）【化１】JPEG2023157842000051.jpg35103（式中、Ｒ１及びＲ２は各々独立に、水素原子又は炭素数１～４のアルキル基を表す。Ｒ３及びＲ４は水素原子又は一体となって炭素数１～４のアルキレン基を形成する基を表す。Ｒ５、Ｒ６及びＲ７は各々独立に、水素原子、炭素数１～４のアルキル基、ビニル基又はアリル基を表す。）で示されるルテニウム錯体。【選択図】図１ |
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【課題】酸化性ガスを用いない低温条件下でルテニウム含有薄膜を作製するのに有用なルテニウム錯体を提供する。【解決手段】一般式（１）【化１】JPEG2023157842000051.jpg35103（式中、Ｒ１及びＲ２は各々独立に、水素原子又は炭素数１～４のアルキル基を表す。Ｒ３及びＲ４は水素原子又は一体となって炭素数１～４のアルキレン基を形成する基を表す。Ｒ５、Ｒ６及びＲ７は各々独立に、水素原子、炭素数１～４のアルキル基、ビニル基又はアリル基を表す。）で示されるルテニウム錯体。【選択図】図１</description><language>eng ; jpn</language><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; ORGANIC CHEMISTRY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231026&DB=EPODOC&CC=JP&NR=2023157842A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231026&DB=EPODOC&CC=JP&NR=2023157842A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OIKE HIROYUKI</creatorcontrib><creatorcontrib>YAMAMOTO ARINORI</creatorcontrib><creatorcontrib>EBIHARA RYOSUKE</creatorcontrib><creatorcontrib>IKEMURA SHUYA</creatorcontrib><creatorcontrib>FURUHASHI NAOTO</creatorcontrib><title>RUTHENIUM COMPLEX, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING RUTHENIUM-CONTAINING THIN FILM</title><description>To provide a ruthenium complex which is useful for production of a ruthenium-containing thin film under low temperature conditions in which an oxidizing gas is not used.SOLUTION: The present invention provides a ruthenium complex represented by general formula (1). (In the formula, each of R1 and R2 independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; each of R3 and R4 represents a hydrogen atom or combined together to form an alkylene group having 1 to 4 carbon atoms; and each of R5, R6 and R7 independently represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group or an allyl group.)SELECTED DRAWING: Figure 1
【課題】酸化性ガスを用いない低温条件下でルテニウム含有薄膜を作製するのに有用なルテニウム錯体を提供する。【解決手段】一般式（１）【化１】JPEG2023157842000051.jpg35103（式中、Ｒ１及びＲ２は各々独立に、水素原子又は炭素数１～４のアルキル基を表す。Ｒ３及びＲ４は水素原子又は一体となって炭素数１～４のアルキレン基を形成する基を表す。Ｒ５、Ｒ６及びＲ７は各々独立に、水素原子、炭素数１～４のアルキル基、ビニル基又はアリル基を表す。）で示されるルテニウム錯体。【選択図】図１</description><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZMgMCg3xcPXzDPVVcPb3DfBxjdBR8HUN8fB3UXDzD1IICPJ3CXX29HNXAKpSCHb0ddVRcPRzwa4EbpSus79fiKOnH0Sfp5-Cm6ePLw8Da1piTnEqL5TmZlBycw1x9tBNLciPTy0uSExOzUstifcKMDIwMjY0NbcwMXI0JkoRALxKNkw</recordid><startdate>20231026</startdate><enddate>20231026</enddate><creator>OIKE HIROYUKI</creator><creator>YAMAMOTO ARINORI</creator><creator>EBIHARA RYOSUKE</creator><creator>IKEMURA SHUYA</creator><creator>FURUHASHI NAOTO</creator><scope>EVB</scope></search><sort><creationdate>20231026</creationdate><title>RUTHENIUM COMPLEX, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING RUTHENIUM-CONTAINING THIN FILM</title><author>OIKE HIROYUKI ; YAMAMOTO ARINORI ; EBIHARA RYOSUKE ; IKEMURA SHUYA ; FURUHASHI NAOTO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023157842A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>OIKE HIROYUKI</creatorcontrib><creatorcontrib>YAMAMOTO ARINORI</creatorcontrib><creatorcontrib>EBIHARA RYOSUKE</creatorcontrib><creatorcontrib>IKEMURA SHUYA</creatorcontrib><creatorcontrib>FURUHASHI NAOTO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OIKE HIROYUKI</au><au>YAMAMOTO ARINORI</au><au>EBIHARA RYOSUKE</au><au>IKEMURA SHUYA</au><au>FURUHASHI NAOTO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RUTHENIUM COMPLEX, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING RUTHENIUM-CONTAINING THIN FILM</title><date>2023-10-26</date><risdate>2023</risdate><abstract>To provide a ruthenium complex which is useful for production of a ruthenium-containing thin film under low temperature conditions in which an oxidizing gas is not used.SOLUTION: The present invention provides a ruthenium complex represented by general formula (1). (In the formula, each of R1 and R2 independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; each of R3 and R4 represents a hydrogen atom or combined together to form an alkylene group having 1 to 4 carbon atoms; and each of R5, R6 and R7 independently represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group or an allyl group.)SELECTED DRAWING: Figure 1
【課題】酸化性ガスを用いない低温条件下でルテニウム含有薄膜を作製するのに有用なルテニウム錯体を提供する。【解決手段】一般式（１）【化１】JPEG2023157842000051.jpg35103（式中、Ｒ１及びＲ２は各々独立に、水素原子又は炭素数１～４のアルキル基を表す。Ｒ３及びＲ４は水素原子又は一体となって炭素数１～４のアルキレン基を形成する基を表す。Ｒ５、Ｒ６及びＲ７は各々独立に、水素原子、炭素数１～４のアルキル基、ビニル基又はアリル基を表す。）で示されるルテニウム錯体。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | RUTHENIUM COMPLEX, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING RUTHENIUM-CONTAINING THIN FILM |
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