COMPOSITION FOR POLISHING, POLISHING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE
To provide means enabling residue on the surface of a polishing-target to be sufficiently removed while polishing the surface of the polishing-target at slow speed.SOLUTION: A composition for polishing is provided, including: an anionic water-soluble polymer that is a copolymer including anion-modif...
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| creator | YOSHINO TSUTOMU |
| description | To provide means enabling residue on the surface of a polishing-target to be sufficiently removed while polishing the surface of the polishing-target at slow speed.SOLUTION: A composition for polishing is provided, including: an anionic water-soluble polymer that is a copolymer including anion-modified colloidal silica, a dispersion medium, a constitutional unit having a sulfonic acid group or a salt thereof, and a constitutional unit having a carboxy group or a salt thereof; polypropylene glycol having a weight average molecular weight of 200 to 700; a nitrogen-free nonionic polymer other than the polypropylene glycol having a weight average molecular weight of 200 to 700; and a nitrogen-containing nonionic polymer.SELECTED DRAWING: None
【課題】研磨対象物を緩やかな速度で研磨しつつも、研磨対象物表面の残渣を十分に除去しうる手段を提供する。【解決手段】アニオン変性コロイダルシリカと、分散媒と、スルホン酸基若しくはその塩の基を有する構成単位と、カルボキシ基若しくはその塩の基を有する構成単位と、を含む共重合体である、アニオン性水溶性高分子と、重量平均分子量が２００以上７００以下であるポリプロピレングリコールと、前記重量平均分子量が２００以上７００以下であるポリプロピレングリコール以外の窒素非含有ノニオン性高分子と、窒素含有ノニオン性高分子と、を含む研磨用組成物を提供する。【選択図】なし |
| format | Patent |
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【課題】研磨対象物を緩やかな速度で研磨しつつも、研磨対象物表面の残渣を十分に除去しうる手段を提供する。【解決手段】アニオン変性コロイダルシリカと、分散媒と、スルホン酸基若しくはその塩の基を有する構成単位と、カルボキシ基若しくはその塩の基を有する構成単位と、を含む共重合体である、アニオン性水溶性高分子と、重量平均分子量が２００以上７００以下であるポリプロピレングリコールと、前記重量平均分子量が２００以上７００以下であるポリプロピレングリコール以外の窒素非含有ノニオン性高分子と、窒素含有ノニオン性高分子と、を含む研磨用組成物を提供する。【選択図】なし</description><language>eng ; jpn</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; POLISHING ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SEMICONDUCTOR DEVICES ; SKI WAXES ; TRANSPORTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231013&DB=EPODOC&CC=JP&NR=2023148461A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231013&DB=EPODOC&CC=JP&NR=2023148461A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOSHINO TSUTOMU</creatorcontrib><title>COMPOSITION FOR POLISHING, POLISHING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE</title><description>To provide means enabling residue on the surface of a polishing-target to be sufficiently removed while polishing the surface of the polishing-target at slow speed.SOLUTION: A composition for polishing is provided, including: an anionic water-soluble polymer that is a copolymer including anion-modified colloidal silica, a dispersion medium, a constitutional unit having a sulfonic acid group or a salt thereof, and a constitutional unit having a carboxy group or a salt thereof; polypropylene glycol having a weight average molecular weight of 200 to 700; a nitrogen-free nonionic polymer other than the polypropylene glycol having a weight average molecular weight of 200 to 700; and a nitrogen-containing nonionic polymer.SELECTED DRAWING: None
【課題】研磨対象物を緩やかな速度で研磨しつつも、研磨対象物表面の残渣を十分に除去しうる手段を提供する。【解決手段】アニオン変性コロイダルシリカと、分散媒と、スルホン酸基若しくはその塩の基を有する構成単位と、カルボキシ基若しくはその塩の基を有する構成単位と、を含む共重合体である、アニオン性水溶性高分子と、重量平均分子量が２００以上７００以下であるポリプロピレングリコールと、前記重量平均分子量が２００以上７００以下であるポリプロピレングリコール以外の窒素非含有ノニオン性高分子と、窒素含有ノニオン性高分子と、を含む研磨用組成物を提供する。【選択図】なし</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHES</subject><subject>POLISHING</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SKI WAXES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEhw9vcN8A_2DPH091Nw8w9SCPD38Qz28PRz10EwFXxdQzz8XXQUHP1cFHwd_ULdHJ1DQoMQMgr-bgrBrr6ezv5-LqHOIUBjgkOdgkOCHENceRhY0xJzilN5oTQ3g5Kba4izh25qQX58anFBYnJqXmpJvFeAkYGRsaGJhYmZoaMxUYoAGIo0QA</recordid><startdate>20231013</startdate><enddate>20231013</enddate><creator>YOSHINO TSUTOMU</creator><scope>EVB</scope></search><sort><creationdate>20231013</creationdate><title>COMPOSITION FOR POLISHING, POLISHING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE</title><author>YOSHINO TSUTOMU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023148461A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHES</topic><topic>POLISHING</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SKI WAXES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>YOSHINO TSUTOMU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOSHINO TSUTOMU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>COMPOSITION FOR POLISHING, POLISHING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE</title><date>2023-10-13</date><risdate>2023</risdate><abstract>To provide means enabling residue on the surface of a polishing-target to be sufficiently removed while polishing the surface of the polishing-target at slow speed.SOLUTION: A composition for polishing is provided, including: an anionic water-soluble polymer that is a copolymer including anion-modified colloidal silica, a dispersion medium, a constitutional unit having a sulfonic acid group or a salt thereof, and a constitutional unit having a carboxy group or a salt thereof; polypropylene glycol having a weight average molecular weight of 200 to 700; a nitrogen-free nonionic polymer other than the polypropylene glycol having a weight average molecular weight of 200 to 700; and a nitrogen-containing nonionic polymer.SELECTED DRAWING: None
【課題】研磨対象物を緩やかな速度で研磨しつつも、研磨対象物表面の残渣を十分に除去しうる手段を提供する。【解決手段】アニオン変性コロイダルシリカと、分散媒と、スルホン酸基若しくはその塩の基を有する構成単位と、カルボキシ基若しくはその塩の基を有する構成単位と、を含む共重合体である、アニオン性水溶性高分子と、重量平均分子量が２００以上７００以下であるポリプロピレングリコールと、前記重量平均分子量が２００以上７００以下であるポリプロピレングリコール以外の窒素非含有ノニオン性高分子と、窒素含有ノニオン性高分子と、を含む研磨用組成物を提供する。【選択図】なし</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING |
| title | COMPOSITION FOR POLISHING, POLISHING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE |
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