PROCESSING METHOD
To provide a processing method capable of suppressing an excessive etching in an inner side surface of a concave part.SOLUTION: A processing method is for a processed material including a thickness film part and a thin film part in a region corresponding to a division schedule line by forming a plur...
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| creator | WAKAHARA MASATOSHI |
| description | To provide a processing method capable of suppressing an excessive etching in an inner side surface of a concave part.SOLUTION: A processing method is for a processed material including a thickness film part and a thin film part in a region corresponding to a division schedule line by forming a plurality of concave parts onto the division schedule line while setting a plurality of division schedule lines are provided onto a front surface. The method comprises: a mask formation step 1001 of forming a mask 27 for a plasma dicing by forming a groove for dividing a protection film along the region corresponding to each division schedule line while laminating the protection film onto a back surface of a rear surface of the front surface; a holding step 1002 of exposing the back surface side onto which the mask is formed by holding the front surface side of the processed material with a holding unit; and a plasma etching step 1003 of executing a plasma etching to the processed material from the back surface side via the mask after the execution of the holding step 1002.SELECTED DRAWING: Figure 3
【課題】凹部の内側面の過度なエッチングを抑制することができる加工方法を提供すること。【解決手段】加工方法は、表面に複数の分割予定ラインが設定されるとともに分割予定ライン上に複数の凹部が形成されることで分割予定ラインに対応した領域に肉厚部と肉薄部とを有した被加工物の加工方法であって、表面の背面の裏面に保護膜を積層するとともに分割予定ラインに対応する領域に沿って保護膜を分断する溝を形成することでプラズマダイシング用のマスクを形成するマスク形成ステップ１００１と、被加工物の表面側を保持ユニットで保持してマスクが形成された裏面側を露出させる保持ステップ１００２と、保持ステップ１００２を実施した後、マスク２７を介して裏面側から被加工物にプラズマエッチングを施すプラズマエッチングステップ１００３と、を備える。【選択図】図３ |
| format | Patent |
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【課題】凹部の内側面の過度なエッチングを抑制することができる加工方法を提供すること。【解決手段】加工方法は、表面に複数の分割予定ラインが設定されるとともに分割予定ライン上に複数の凹部が形成されることで分割予定ラインに対応した領域に肉厚部と肉薄部とを有した被加工物の加工方法であって、表面の背面の裏面に保護膜を積層するとともに分割予定ラインに対応する領域に沿って保護膜を分断する溝を形成することでプラズマダイシング用のマスクを形成するマスク形成ステップ１００１と、被加工物の表面側を保持ユニットで保持してマスクが形成された裏面側を露出させる保持ステップ１００２と、保持ステップ１００２を実施した後、マスク２７を介して裏面側から被加工物にプラズマエッチングを施すプラズマエッチングステップ１００３と、を備える。【選択図】図３</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231012&DB=EPODOC&CC=JP&NR=2023146066A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231012&DB=EPODOC&CC=JP&NR=2023146066A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WAKAHARA MASATOSHI</creatorcontrib><title>PROCESSING METHOD</title><description>To provide a processing method capable of suppressing an excessive etching in an inner side surface of a concave part.SOLUTION: A processing method is for a processed material including a thickness film part and a thin film part in a region corresponding to a division schedule line by forming a plurality of concave parts onto the division schedule line while setting a plurality of division schedule lines are provided onto a front surface. The method comprises: a mask formation step 1001 of forming a mask 27 for a plasma dicing by forming a groove for dividing a protection film along the region corresponding to each division schedule line while laminating the protection film onto a back surface of a rear surface of the front surface; a holding step 1002 of exposing the back surface side onto which the mask is formed by holding the front surface side of the processed material with a holding unit; and a plasma etching step 1003 of executing a plasma etching to the processed material from the back surface side via the mask after the execution of the holding step 1002.SELECTED DRAWING: Figure 3
【課題】凹部の内側面の過度なエッチングを抑制することができる加工方法を提供すること。【解決手段】加工方法は、表面に複数の分割予定ラインが設定されるとともに分割予定ライン上に複数の凹部が形成されることで分割予定ラインに対応した領域に肉厚部と肉薄部とを有した被加工物の加工方法であって、表面の背面の裏面に保護膜を積層するとともに分割予定ラインに対応する領域に沿って保護膜を分断する溝を形成することでプラズマダイシング用のマスクを形成するマスク形成ステップ１００１と、被加工物の表面側を保持ユニットで保持してマスクが形成された裏面側を露出させる保持ステップ１００２と、保持ステップ１００２を実施した後、マスク２７を介して裏面側から被加工物にプラズマエッチングを施すプラズマエッチングステップ１００３と、を備える。【選択図】図３</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAMCPJ3dg0O9vRzV_B1DfHwd-FhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRsaGJmYGZmaOxkQpAgBhzh5G</recordid><startdate>20231012</startdate><enddate>20231012</enddate><creator>WAKAHARA MASATOSHI</creator><scope>EVB</scope></search><sort><creationdate>20231012</creationdate><title>PROCESSING METHOD</title><author>WAKAHARA MASATOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023146066A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WAKAHARA MASATOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WAKAHARA MASATOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PROCESSING METHOD</title><date>2023-10-12</date><risdate>2023</risdate><abstract>To provide a processing method capable of suppressing an excessive etching in an inner side surface of a concave part.SOLUTION: A processing method is for a processed material including a thickness film part and a thin film part in a region corresponding to a division schedule line by forming a plurality of concave parts onto the division schedule line while setting a plurality of division schedule lines are provided onto a front surface. The method comprises: a mask formation step 1001 of forming a mask 27 for a plasma dicing by forming a groove for dividing a protection film along the region corresponding to each division schedule line while laminating the protection film onto a back surface of a rear surface of the front surface; a holding step 1002 of exposing the back surface side onto which the mask is formed by holding the front surface side of the processed material with a holding unit; and a plasma etching step 1003 of executing a plasma etching to the processed material from the back surface side via the mask after the execution of the holding step 1002.SELECTED DRAWING: Figure 3
【課題】凹部の内側面の過度なエッチングを抑制することができる加工方法を提供すること。【解決手段】加工方法は、表面に複数の分割予定ラインが設定されるとともに分割予定ライン上に複数の凹部が形成されることで分割予定ラインに対応した領域に肉厚部と肉薄部とを有した被加工物の加工方法であって、表面の背面の裏面に保護膜を積層するとともに分割予定ラインに対応する領域に沿って保護膜を分断する溝を形成することでプラズマダイシング用のマスクを形成するマスク形成ステップ１００１と、被加工物の表面側を保持ユニットで保持してマスクが形成された裏面側を露出させる保持ステップ１００２と、保持ステップ１００２を実施した後、マスク２７を介して裏面側から被加工物にプラズマエッチングを施すプラズマエッチングステップ１００３と、を備える。【選択図】図３</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | PROCESSING METHOD |
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