SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAM
To provide a substrate processing apparatus and programs that prevent warpage and cracking of substrates with non-uniform in-plane temperature due to heat treatment, as well as a method for manufacturing semiconductor devices.SOLUTION: A substrate processing apparatus has a processing chamber 201 fo...
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| creator | YAMAMOTO KATSUHIKO NISHIDO SHUHEI NAKAGAWA TAKASHI YANAGISAWA AKIHIKO SASAKI SHINYA MICHIDA NORIAKI |
| description | To provide a substrate processing apparatus and programs that prevent warpage and cracking of substrates with non-uniform in-plane temperature due to heat treatment, as well as a method for manufacturing semiconductor devices.SOLUTION: A substrate processing apparatus has a processing chamber 201 for processing a plurality of substrates 200 held in a substrate holding section 217, electromagnetic wave generators 655-1 and 655-2 that supply electromagnetic waves to the processing chamber, and a gas supply section 105 that supplies cooling gas between the plurality of substrates through a plurality of gas supply ports provided to match the intervals at which the plurality of substrates are held.SELECTED DRAWING: Figure 1
【課題】熱処理による面内温度の不均一な基板の反りや割れを防止する基板処理装置及びプログラム並びに半導体装置の製造方法を提供する。【解決手段】基板処理装置は、基板保持部２１７に保持される複数の基板２００を処理する処理室２０１と、処理室内に電磁波を供給する電磁波発生器６５５－１、６５５－２と、複数の基板が保持される間隔に合うように設けられた複数のガス供給口から、複数の基板間に冷却ガスを供給するガス供給部１０５と、を備える。【選択図】図１ |
| format | Patent |
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【課題】熱処理による面内温度の不均一な基板の反りや割れを防止する基板処理装置及びプログラム並びに半導体装置の製造方法を提供する。【解決手段】基板処理装置は、基板保持部２１７に保持される複数の基板２００を処理する処理室２０１と、処理室内に電磁波を供給する電磁波発生器６５５－１、６５５－２と、複数の基板が保持される間隔に合うように設けられた複数のガス供給口から、複数の基板間に冷却ガスを供給するガス供給部１０５と、を備える。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231006&DB=EPODOC&CC=JP&NR=2023143716A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231006&DB=EPODOC&CC=JP&NR=2023143716A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMAMOTO KATSUHIKO</creatorcontrib><creatorcontrib>NISHIDO SHUHEI</creatorcontrib><creatorcontrib>NAKAGAWA TAKASHI</creatorcontrib><creatorcontrib>YANAGISAWA AKIHIKO</creatorcontrib><creatorcontrib>SASAKI SHINYA</creatorcontrib><creatorcontrib>MICHIDA NORIAKI</creatorcontrib><title>SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAM</title><description>To provide a substrate processing apparatus and programs that prevent warpage and cracking of substrates with non-uniform in-plane temperature due to heat treatment, as well as a method for manufacturing semiconductor devices.SOLUTION: A substrate processing apparatus has a processing chamber 201 for processing a plurality of substrates 200 held in a substrate holding section 217, electromagnetic wave generators 655-1 and 655-2 that supply electromagnetic waves to the processing chamber, and a gas supply section 105 that supplies cooling gas between the plurality of substrates through a plurality of gas supply ports provided to match the intervals at which the plurality of substrates are held.SELECTED DRAWING: Figure 1
【課題】熱処理による面内温度の不均一な基板の反りや割れを防止する基板処理装置及びプログラム並びに半導体装置の製造方法を提供する。【解決手段】基板処理装置は、基板保持部２１７に保持される複数の基板２００を処理する処理室２０１と、処理室内に電磁波を供給する電磁波発生器６５５－１、６５５－２と、複数の基板が保持される間隔に合うように設けられた複数のガス供給口から、複数の基板間に冷却ガスを供給するガス供給部１０５と、を備える。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjL0KwjAURrs4iPoOF-cKthGdr8lNGyE_5MfBpRSJk2ihvj-24AM4fXDO4VsWt5DOIXqMBM5bTiEo0wA6hxNLoQRNsbUCpPWg0SSJPCY_N4G04taIxOPkBF0VpxLQiPmo8ajXxeLRP8e8-e2q2EqKvN3l4d3lcejv-ZU_3cXV-5pVB3aqjsj-ir7v9DKI</recordid><startdate>20231006</startdate><enddate>20231006</enddate><creator>YAMAMOTO KATSUHIKO</creator><creator>NISHIDO SHUHEI</creator><creator>NAKAGAWA TAKASHI</creator><creator>YANAGISAWA AKIHIKO</creator><creator>SASAKI SHINYA</creator><creator>MICHIDA NORIAKI</creator><scope>EVB</scope></search><sort><creationdate>20231006</creationdate><title>SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAM</title><author>YAMAMOTO KATSUHIKO ; NISHIDO SHUHEI ; NAKAGAWA TAKASHI ; YANAGISAWA AKIHIKO ; SASAKI SHINYA ; MICHIDA NORIAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023143716A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMAMOTO KATSUHIKO</creatorcontrib><creatorcontrib>NISHIDO SHUHEI</creatorcontrib><creatorcontrib>NAKAGAWA TAKASHI</creatorcontrib><creatorcontrib>YANAGISAWA AKIHIKO</creatorcontrib><creatorcontrib>SASAKI SHINYA</creatorcontrib><creatorcontrib>MICHIDA NORIAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMAMOTO KATSUHIKO</au><au>NISHIDO SHUHEI</au><au>NAKAGAWA TAKASHI</au><au>YANAGISAWA AKIHIKO</au><au>SASAKI SHINYA</au><au>MICHIDA NORIAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAM</title><date>2023-10-06</date><risdate>2023</risdate><abstract>To provide a substrate processing apparatus and programs that prevent warpage and cracking of substrates with non-uniform in-plane temperature due to heat treatment, as well as a method for manufacturing semiconductor devices.SOLUTION: A substrate processing apparatus has a processing chamber 201 for processing a plurality of substrates 200 held in a substrate holding section 217, electromagnetic wave generators 655-1 and 655-2 that supply electromagnetic waves to the processing chamber, and a gas supply section 105 that supplies cooling gas between the plurality of substrates through a plurality of gas supply ports provided to match the intervals at which the plurality of substrates are held.SELECTED DRAWING: Figure 1
【課題】熱処理による面内温度の不均一な基板の反りや割れを防止する基板処理装置及びプログラム並びに半導体装置の製造方法を提供する。【解決手段】基板処理装置は、基板保持部２１７に保持される複数の基板２００を処理する処理室２０１と、処理室内に電磁波を供給する電磁波発生器６５５－１、６５５－２と、複数の基板が保持される間隔に合うように設けられた複数のガス供給口から、複数の基板間に冷却ガスを供給するガス供給部１０５と、を備える。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAM |
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