PATTERNING METHOD AND PATTERNING DEVICE
To make it possible to develop a pattern exposed on a photoresist film by a dry process.SOLUTION: A patterning method includes an infiltration step and an etching step. The infiltration step is for infiltrating a material that expands a selectivity ratio between an exposed portion and an unexposed p...
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| creator | TSUZUKI REIKO YAMAJI TOMOHITO YAMADA KAZUKI |
| description | To make it possible to develop a pattern exposed on a photoresist film by a dry process.SOLUTION: A patterning method includes an infiltration step and an etching step. The infiltration step is for infiltrating a material that expands a selectivity ratio between an exposed portion and an unexposed portion into a photoresist film of a substrate provided with the photoresist film on which the exposed portion and the unexposed portion are formed by exposure on the surface. In the etching step, the photoresist film that has undergone the infiltration step is dry etched.SELECTED DRAWING: Figure 3
【課題】フォトレジスト膜に露光したパターンをドライプロセスにより現像を可能にすること。【解決手段】パターニング方法は、浸潤工程と、エッチング工程とを含む。浸潤工程は、露光により露光部分と未露光部分が形成されたフォトレジスト膜が表面に設けられた基板のフォトレジスト膜に露光部分と未露光部分の選択比を拡大する材料を浸潤させる。エッチング工程は、浸潤工程を行ったフォトレジスト膜をドライエッチングする。【選択図】図３ |
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【課題】フォトレジスト膜に露光したパターンをドライプロセスにより現像を可能にすること。【解決手段】パターニング方法は、浸潤工程と、エッチング工程とを含む。浸潤工程は、露光により露光部分と未露光部分が形成されたフォトレジスト膜が表面に設けられた基板のフォトレジスト膜に露光部分と未露光部分の選択比を拡大する材料を浸潤させる。エッチング工程は、浸潤工程を行ったフォトレジスト膜をドライエッチングする。【選択図】図３</description><language>eng ; jpn</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231005&DB=EPODOC&CC=JP&NR=2023142358A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231005&DB=EPODOC&CC=JP&NR=2023142358A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TSUZUKI REIKO</creatorcontrib><creatorcontrib>YAMAJI TOMOHITO</creatorcontrib><creatorcontrib>YAMADA KAZUKI</creatorcontrib><title>PATTERNING METHOD AND PATTERNING DEVICE</title><description>To make it possible to develop a pattern exposed on a photoresist film by a dry process.SOLUTION: A patterning method includes an infiltration step and an etching step. The infiltration step is for infiltrating a material that expands a selectivity ratio between an exposed portion and an unexposed portion into a photoresist film of a substrate provided with the photoresist film on which the exposed portion and the unexposed portion are formed by exposure on the surface. In the etching step, the photoresist film that has undergone the infiltration step is dry etched.SELECTED DRAWING: Figure 3
【課題】フォトレジスト膜に露光したパターンをドライプロセスにより現像を可能にすること。【解決手段】パターニング方法は、浸潤工程と、エッチング工程とを含む。浸潤工程は、露光により露光部分と未露光部分が形成されたフォトレジスト膜が表面に設けられた基板のフォトレジスト膜に露光部分と未露光部分の選択比を拡大する材料を浸潤させる。エッチング工程は、浸潤工程を行ったフォトレジスト膜をドライエッチングする。【選択図】図３</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAPcAwJcQ3y8_RzV_B1DfHwd1Fw9HNRQBJ1cQ3zdHblYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBkbGhiZGxqYWjsZEKQIALAokOg</recordid><startdate>20231005</startdate><enddate>20231005</enddate><creator>TSUZUKI REIKO</creator><creator>YAMAJI TOMOHITO</creator><creator>YAMADA KAZUKI</creator><scope>EVB</scope></search><sort><creationdate>20231005</creationdate><title>PATTERNING METHOD AND PATTERNING DEVICE</title><author>TSUZUKI REIKO ; YAMAJI TOMOHITO ; YAMADA KAZUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023142358A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TSUZUKI REIKO</creatorcontrib><creatorcontrib>YAMAJI TOMOHITO</creatorcontrib><creatorcontrib>YAMADA KAZUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TSUZUKI REIKO</au><au>YAMAJI TOMOHITO</au><au>YAMADA KAZUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PATTERNING METHOD AND PATTERNING DEVICE</title><date>2023-10-05</date><risdate>2023</risdate><abstract>To make it possible to develop a pattern exposed on a photoresist film by a dry process.SOLUTION: A patterning method includes an infiltration step and an etching step. The infiltration step is for infiltrating a material that expands a selectivity ratio between an exposed portion and an unexposed portion into a photoresist film of a substrate provided with the photoresist film on which the exposed portion and the unexposed portion are formed by exposure on the surface. In the etching step, the photoresist film that has undergone the infiltration step is dry etched.SELECTED DRAWING: Figure 3
【課題】フォトレジスト膜に露光したパターンをドライプロセスにより現像を可能にすること。【解決手段】パターニング方法は、浸潤工程と、エッチング工程とを含む。浸潤工程は、露光により露光部分と未露光部分が形成されたフォトレジスト膜が表面に設けられた基板のフォトレジスト膜に露光部分と未露光部分の選択比を拡大する材料を浸潤させる。エッチング工程は、浸潤工程を行ったフォトレジスト膜をドライエッチングする。【選択図】図３</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | PATTERNING METHOD AND PATTERNING DEVICE |
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