METHOD FOR MANUFACTURING β-Ga2O3/β-Ga2O3 LAMINATE

To provide a method for laminating a β-Ga2O3 single crystal having high crystallinity and a fast growth rate on a β-Ga2O3 substrate by a liquid phase epitaxial growth method to manufacture a β-Ga2O3/β-Ga2O3 laminate.SOLUTION: A method for manufacturing a β-Ga2O3/β-Ga2O3 laminate comprises: mixing an...

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Hauptverfasser:	SEKIWA HIDEYUKI, TADOKORO HIROAKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	To provide a method for laminating a β-Ga2O3 single crystal having high crystallinity and a fast growth rate on a β-Ga2O3 substrate by a liquid phase epitaxial growth method to manufacture a β-Ga2O3/β-Ga2O3 laminate.SOLUTION: A method for manufacturing a β-Ga2O3/β-Ga2O3 laminate comprises: mixing and melting solute Ga2O3, and PbO and Bi2O3 used as a solvent; directly contacting a β-Ga2O3 substrate to the obtained melt; and growing a β-Ga2O3 single crystal on the β-Ga2O3 substrate by a liquid phase epitaxial growth method to obtain a β-Ga2O3/β-Ga2O3 laminate.SELECTED DRAWING: None 【課題】β－Ｇａ２Ｏ３基板上に、高い結晶性を有し、成長速度が速いβ－Ｇａ２Ｏ３単結晶を液相エピタキシャル成長法で積層させてβ－Ｇａ２Ｏ３／β－Ｇａ２Ｏ３積層体を製造する方法を提供する。【解決手段】溶質であるＧａ２Ｏ３と、溶媒であるＰｂＯおよびＢｉ２Ｏ３とを混合して融解させた後、得られた融液に、β－Ｇａ２Ｏ３基板を直接接触させ、液相エピタキシャル成長法によってβ－Ｇａ２Ｏ３単結晶を前記β－Ｇａ２Ｏ３基板上に成長させることでβ－Ｇａ２Ｏ３／β－Ｇａ２Ｏ３積層体を得るβ－Ｇａ２Ｏ３／β－Ｇａ２Ｏ３積層体の製造方法とする。【選択図】なし